SI4431ADY-T1-E3 Vishay Semiconductors, SI4431ADY-T1-E3 Datasheet

SI4431ADY-T1-E3

Manufacturer Part Number

SI4431ADY-T1-E3

Description

Manufacturer

Vishay Semiconductors

Datasheet

1.SI4431ADY-T1-E3.pdf (5 pages)

Specifications of SI4431ADY-T1-E3

Case

SOP8

Date_code

09+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4431ADY-T1-E3

Manufacturer:

VISHAY

Quantity:

143 968

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI4431ADY-T1-E3

Manufacturer:

VISHAY

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4431ADY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

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Notes

Document Number: 71803

S-51472—Rev. D, 01-Aug-05

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Maximum Junction to Ambient

Maximum Junction-to-Ambient

Maximum Junction-to-Foot

Surface Mounted on 1” x 1” FR4 Board.

–30

(V)

Ordering Information: Si4431ADY-T1

0.052 @ V

0.030 @ V

= 150_C)

Parameter

DS(on)

Si4431ADY-T1—E3 (Lead (Pb)-free)

= –4.5 V

= –10 V

Top View

(W)

P-Channel 30-V (D-S) MOSFET

SO-8

Steady State

t v 10 sec

–7.2

–5.5

= 25_C

= 70_C

= 25_C

= 70_C

(A)

Symbol

, T

thJA

thJF

stg

P-Channel MOSFET

D TrenchFETr Power MOSFET

10 secs

Typical

–7.2

–5.8

–2.1

2.5

1.6

–55 to 150

"20

–30

Steady State

Maximum

Vishay Siliconix

–5.3

–4.2

–1.3

1.35

0.87

Si4431ADY

www.vishay.com

Unit

_C/W

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