SI4500DY-T1-E3 Vishay Semiconductors, SI4500DY-T1-E3 Datasheet

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SI4500DY-T1-E3

Manufacturer Part Number
SI4500DY-T1-E3
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SI4500DY-T1-E3

Case
SOP8
Date_code
09+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4500DY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Part Number:
SI4500DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
Document Number: 70880
S-00269—Rev. A, 26-Apr-99
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
Surface Mounted on FR4 Board.
t
N-Channel
N-Channel
P-Channel
P-Channel
10 sec
G
G
S
S
Complementary MOSFET Half-Bridge (N- and P-Channel)
1
1
2
2
1
2
3
4
Top View
SO-8
J
J
V
a, b
a, b
= 150 C)
= 150 C)
DS
a
a
–20
–20
20
20
(V)
Parameter
P
Parameter
8
7
6
5
a, b
a, b
D
D
D
D
a, b
0.065 @ V
0.100 @ V
0.030 @ V
0.040 @ V
r
DS(on)
GS
GS
GS
GS
New Product
( )
= –4.5 V
= –2.5 V
Steady-State
Steady-State
= 4.5 V
= 2.5 V
t
T
T
T
T
A
A
A
A
= 25 C
= 70 C
= 25 C
= 70 C
10 sec
G
G
Symbol
S
Symbol
2
1
T
R
R
R
J
V
V
I
P
P
, T
DM
thJC
I
I
I
thJA
thJA
DS
GS
D
D
S
D
D
b l
stg
I
D
(A)
7.0
6.0
4.5
3.5
S
S
2
1
Typ
N-Channel
N-Channel
38
73
17
1.7
20
7.0
5.5
D
12
30
Max
www.vishay.com FaxBack 408-970-5600
50
95
22
–55 to 150
2.5
1.6
Vishay Siliconix
Typ
P-Channel
P- Channel
40
73
20
–1.7
–20
4.5
3.5
Si4500DY
12
20
Max
50
95
26
Unit
U i
Unit
C/W
C/W
W
W
V
V
A
A
A
C
2-1

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