SI4812DY-T1-E3 Vishay Semiconductors, SI4812DY-T1-E3 Datasheet

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SI4812DY-T1-E3

Manufacturer Part Number
SI4812DY-T1-E3
Description
Manufacturer
Vishay Semiconductors

Specifications of SI4812DY-T1-E3

Case
SOP8
Date_code
09+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4812DY-T1-E3
Manufacturer:
VISHAY
Quantity:
1 544
Part Number:
SI4812DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
MOSFET PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient (t v 10 sec)
Maximum Junction to Ambient (t
Maximum Junction-to-Ambient (t = steady state)
V
V
Surface Mounted on FR4 Board.
t v 10 sec.
i
DS
DS
G
S
S
S
30
30
30
(V)
(V)
J
1
2
3
4
ti
N-Channel 30-V (D-S) MOSFET with Schottky Diode
Top View
Diode Forward Voltage
t A bi
SO-8
Parameter
0.028 @ V
0.018 @ V
0.50 V @ 1.0 A
r
J
J
DS(on)
V
= 150_C) (MOSFET)
= 150_C) (MOSFET)
t (t
Parameter
SD
8
7
6
5
GS
GS
steady state)
(V)
10
(W)
= 4.5 V
= 10 V
D
D
D
D
a b
a, b
a b
a, b
)
a
a
Ordering Information:
Si4812DY
Si4812DY-T1 (with Tape and Reel)
Si4812DY—E3 (Lead (Pb)-Free)
Si4812DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
a
a
a, b
a, b
a, b
I
I
D
F
7.3
1.4
9
A
(A)
(A)
T
T
T
T
T
T
Device
MOSFET
MOSFET
Schottky
Schottky
A
A
A
A
A
A
= 25_C UNLESS OTHERWISE NOTED)
= 25_C
= 70_C
= 25_C
= 70_C
= 25_C
= 70_C
Symbol
Symbol
T
R
R
V
J
V
V
I
I
P
P
, T
I
I
DM
I
FM
thJA
I
DS
DS
GS
D
D
S
F
D
D
stg
FEATURES
D LITTLE FOOTr Plus Power MOSFET
D 100% R
Typical
10 sec
7.5
2.5
1.6
2.0
1.3
2.1
1.4
40
50
72
85
9
g
N-Channel MOSFET
Tested
−55 to 150
Limit
"20
G
30
30
50
30
Steady State
Vishay Siliconix
Maximum
100
6.9
5.6
1.2
0.8
1.4
0.9
1.2
0.8
50
60
90
D
S
Si4812DY
www.vishay.com
Schottky Diode
Unit
Unit
_C/W
_C/W
_C
W
W
V
V
A
A
1

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