SI4830DY-T1-E3 Vishay Semiconductors, SI4830DY-T1-E3 Datasheet

SI4830DY-T1-E3

Manufacturer Part Number

SI4830DY-T1-E3

Description

Manufacturer

Vishay Semiconductors

Datasheet

1.SI4830DY-T1-E3.pdf (6 pages)

Specifications of SI4830DY-T1-E3

Case

SOP8

Date_code

09+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SI4830DY-T1-E3

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 6
Download datasheet (90Kb)

Notes

Document Number: 71161

S-31989—Rev. C, 13-Oct-03

PRODUCT SUMMARY

SCHOTTKY PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain)

Surface Mounted on 1” x 1” FR4 Board.

Ordering Information: Si4830DY

(V)

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

t A bi

Diode Forward Voltage

Parameter

0.030 @ V

= 150_C)

0.022 @ V

Si4830DY-T1 (with Tape and Reel)

Top View

0.50 V @ 1.0 A

SO-8

DS(on)

(V)

(W)

= 4.5 V

= 10 V

Steady-State

t v 10 sec

= 25_C

= 70_C

= 25_C

= 70_C

= 25_C UNLESS OTHERWISE NOTED)

Symbol

7.5

6.5

2.0

(A)

, T

thJA

thJC

stg

N-Channel MOSFET

Typ

MOSFET

10 secs

7.5

6.0

1.7

2.0

1.3

Max

62.5

110

- 55 to 150

"20

N-Channel MOSFET

Typ

Steady State

Schottky

Vishay Siliconix

5.7

4.6

0.9

1.1

0.7

Si4830DY

Max

62.5

110

Schottky Diode

www.vishay.com

Unit

_C/W

C/W

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