FM180-M-R FORMOSA [Formosa MS], FM180-M-R Datasheet

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FM180-M-R

Manufacturer Part Number
FM180-M-R
Description
Chip Schottky Barrier Diodes - Silicon epitaxial planer type
Manufacturer
FORMOSA [Formosa MS]
Datasheet
Chip Schottky Barrier Diodes
FM120-M-R THRU FM1100-M-R
Silicon epitaxial planer type
Case : Mol d ed plastic, JEDE C SOD-123 / MI N I SMA
Termi n als : Solder plated, s olderable per MIL-STD-750,
Pol a rity : Indicated by cathode band
Mounting P osition : Any
Weight : 0.04 gram
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
FM120-M-R
FM130-M-R
FM140-M-R
FM150-M-R
FM160-M-R
FM180-M-R
FM1100-M-R
Features
Mechanical data
MAXIMUM RATINGS
SYMBOLS
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
For surface mounted applications.
Method 2026
PARAMETER
MARKING
CODE
12
13
14
15
16
18
10
V
(AT T
RRM
(V)
100
20
30
40
50
60
80
*1
A
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
V
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
=25
V
R
R
RMS
(V)
14
21
28
35
42
56
70
= V
= V
o
*2
RRM
RRM
C unless otherwise noted)
T
T
A
A
V
=
= 125
(V)
100
20
30
40
50
60
80
R
*3
25
o
o
C
C
CONDITIONS
V
0.50
0.70
0.85
(V)
F
*4
temperature
-55 to +125
-55 to +150
Operating
(
0.035(0.9) Typ.
o
C)
Dimensions in inches and (millimeters)
Symbol
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
I
Rq
T
I
I
C
FSM
STG
O
R
J
JA
0.161(4.1)
0.146(3.7)
0.126(3.2)
0.110(2.8)
SOD-123
Formosa MS
MIN.
-55
TYP.
120
98
0.071(1.8)
0.055(1.4)
0.063(1.6)
0.055(1.4)
0.012(0.3) Typ.
0.035(0.9) Typ.
MAX.
+150
1.0
0.1
2.0
30
o
C / w
UNIT
mA
mA
pF
o
A
A
C

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FM180-M-R Summary of contents

Page 1

... Diode junction capacitance Storage temperature *1 MARKING V RRM SYMBOLS CODE (V) FM120-M FM130-M FM140-M FM150-M FM160-M FM180-M FM1100-M-R 10 100 o =25 C unless otherwise noted) A CONDITIONS See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode RRM A ...

Page 2

RATING AND CHARACTERISTIC CURVES (FM120-M-R THRU FM1100-M-R) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0 100 120 AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT Tj= ...

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