QM20 Mitsubishi Electric Semiconductor, QM20 Datasheet - Page 3

• Manufacturer Part Number: QM20
• Description: MEDIUM POWER SWITCHING USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

PERFORMANCE CURVES
10
10
10
50
40
30
20
10
–1
–2
0
7
5
4
3
2
7
5
4
3
2
5
4
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
0
10
1.0
0
COLLECTOR-EMITTER SATURATION
–2
V
T
T
BASE-EMITTER VOLTAGE V
j
j
CE
=25°C
=25°C
CHARACTERISTICS (TYPICAL)
COMMON EMITTER OUTPUT
CHARACTERISTIC (TYPICAL)
=2.0V
COMMON EMITTER INPUT
2
1.4
I
1
C
BASE CURRENT I
=15A
3
VOLTAGE (TYPICAL)
4
5
1.8
2
7
10
I
C
=20A
–1
I
2.2
C
3
=25A
2
B
I
I
B
B
3
T
T
I
I
I
(A)
=400mA
=200mA
B
B
B
j
j
2.6
=25°C
=125°C
=80mA
=40mA
=20mA
4
4
BE
5
(V)
CE
7
(V)
3.0
10
5
0
10
10
10
10
10
10
10
–1
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
3
2
7
5
4
3
2
7
5
4
3
3
2
1
0
1
0
10
10
10
SWITCHING TIME VS. COLLECTOR
t
0
0
I
0
COLLECTOR CURRENT (TYPICAL)
on
MITSUBISHI TRANSISTOR MODULES
t
B
t
f
=80mA
s
CHARACTERISTICS (TYPICAL)
V
COLLECTOR CURRENT I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
V
CE(sat)
MEDIUM POWER SWITCHING USE
2 3 4 5 7
BE(sat)
2 3 4 5 7
2 3 4 5 7
T
T
T
T
T
T
DC CURRENT GAIN VS.
SATURATION VOLTAGE
j
j
j
j
j
j
=25°C
=125°C
=25°C
=125°C
=25°C
=125°C
CURRENT (TYPICAL)
V
CE
=2.0V
10
10
10
1
1
1
2 3 4 5 7
2 3 4 5 7
2 3 4 5 7
QM20KD-HB
I
B2
I
B1
V
V
=–400mA
CE
CC
=120mA
C
C
C
INSULATED TYPE
=5.0V
=300V
(A)
(A)
(A)
10
10
10
2
2
2
Feb.1999