AR629AU9 National Semiconductor, AR629AU9 Datasheet - Page 12

• Manufacturer Part Number: AR629AU9
• Description: Gate Array
• Manufacturer: National Semiconductor

MNAR629A-X REV 0A0
TDCLXCS
TDEXST
TDSTEX
THBEX
THRB
THRB2
THRCS
THRLS
THRRZ
THRXX
THRXY
THRXZ
THXCS
TMHR
TMSR
TSBEX
TSRB
TSRB2
Electrical Characteristics
AC: PERSONALITY PROM INTERFACE (XPP/RPP/MPP) CHARACTERISTICS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC:
SYMBOL
Vdd = Vcc = 5V +5%, Vss = GND, -55 C <TA<+125 C, CL = 50pF
Delay from CLRX
High to XCS Low
Delay from EXST
High to STAC Low
Delay from STAC
Low to EXST High
EX3-0 output hold
after EXT. strobe
BUS1 address hold
time after RICK
BUS2 data input
to RICK hold time
Receive PROM chip
select hold after
RICK
Load Strap hold
time after RICK
RZ2-0 address
hold time after
RICK
XX address hold
time after RICK
XY address hold
time after RICK
XZ address hold
time after RICK
Transmit PROM
chip select hold
after RICK
Minimum data hold
time
Minimum data
setup time
EX3-0 output
stable before
EXT. strobe
BUS1 address
setup time prior
to RICK
BUS2 data input
to RICK setup
time
PARAMETER
Vdd = 5V +5%
Vdd = 4.75V, Vdd = 5.25V
Single Byte
Vdd = 4.75V, Vdd = 5.25V
Single byte, Double byte, Triple byte
CONDITIONS
12
NOTES
7
8
MICROCIRCUIT DATA SHEET
PIN-
NAME
24T
2T-10
2T
60
2T
2T
2T
2T
2T
2T
2T
60
30
6T-35
14T-15
0
30
MIN
27T+9
3T+35
5T+35
MAX
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
9, 10,
11
GROUPS
SUB-