M391T6553BG0-CC Samsung, M391T6553BG0-CC Datasheet - Page 2

• Manufacturer Part Number: M391T6553BG0-CC
• Description: DDR2 Unbuffered SDRAM MODULE
• Manufacturer: Samsung

Features
DDR2 Unbuffered DIMM Ordering Information
Note: “Z” of Part number stand for Lead-free products.
256MB,512MB,1GB Unbuffered DIMMs
Note: For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram.
• Performance range
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz f
• 4 Bank
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Average Refesh Period 7.8us at lower then T
• Serial presence detect with EEPROM
• DDR2 SDRAM Package: 60ball FBGA - 64Mx8, 84ball FBGA - 32Mx16
• All of Lead-free products are compliant for RoHS
M378T3354BG(Z)0-CD5/CC
M378T6553BG(Z)0-CD5/CC
M378T2953BG(Z)0-CD5/CC
M391T6553BG(Z)0-CD5/CC
M391T2953BG(Z)0-CD5/CC
Speed@CL3
Speed@CL4
Speed@CL5
CL-tRCD-tRP
Part Number
CK
for 400Mb/sec/pin, 267MHz f
D5(DDR2-533)
4-4-4
400
533
-
Density
256MB
512MB
512MB
1GB
1GB
Organization
CK
CC(DDR2-400)
128Mx64
128Mx72
32Mx64
64Mx64
64Mx72
CASE
for 533Mb/sec/pin
3-3-3
x64 Non ECC
400
400
-
x72 ECC
85×C, 3.9us at 85×C < T
Component Composition
32Mx16(K4T51163QB)*4
64Mx8(K4T51083QB)*16
64Mx8(K4T51083QB)*18
Mbps
Mbps
Mbps
64Mx8(K4T51083QB)*8
64Mx8(K4T51083QB)*9
Unit
CK
CASE
< 95 ×C
Number of
Rank
1
1
2
1
2
Rev. 1.2 Jan. 2005
DDR2 SDRAM
Height
30mm
30mm
30mm
30mm
30mm