M464S0924FTS Samsung semiconductor, M464S0924FTS Datasheet - Page 10

• Manufacturer Part Number: M464S0924FTS
• Description: 144pin Unbuffered SODIMM based on 128Mb F-die 64-bit Non ECC
• Manufacturer: Samsung semiconductor

(Recommended operating condition unless otherwise noted, T
64MB, 128MB Unbuffered SODIMM
M464S1724FTS (16M x 64, 128MB Module)
DC CHARACTERISTICS
Notes :
Operating current
(One bank active)
Precharge standby current
in power-down mode
Precharge standby current
in non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Parameter
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
P
N
P
N
Burst length = 1
t
I
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE & CLK ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE ≤ 0.2V
RC
O
O
CCD
RC
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
A
Test Condition
(max), t
(max), t
= 0 to 70°C)
CC
CC
IH
= 10ns
= 10ns
/V
IL
IH
IH
CC
CC
IL
IL
=V
(min), t
(min), t
(max), t
(max), t
DDQ
=∞
=∞
/V
CC
CC
CC
CC
SSQ
= 10ns
= 10ns
=∞
=∞
)
C
L
Version
520
160
240
200
680
920
7A
6.4
16
16
80
40
40
16
Rev. 1.4 May 2004
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
SDRAM
Note
1
1
2