K4S643232E-TI60 Samsung semiconductor, K4S643232E-TI60 Datasheet - Page 3

• Manufacturer Part Number: K4S643232E-TI60
• Description: 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: Samsung semiconductor

K4S643232E-TI/P
512K x 32Bit x 4 Banks Synchronous DRAM
FEATURES
• 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
• All inputs are sampled at the positive going edge of the system
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 15.6us refresh duty cycle(4K/64ms)
• Industrial Temperature range : -45
FUNCTIONAL BLOCK DIAGRAM
clock
-. Burst length (1, 2, 4, 8 & Full page)
-. CAS latency (2 & 3)
-. Burst type (Sequential & Interleave)
ADD
CLK
LCKE
CLK
LRAS
CKE
Bank Select
LCBR
o
C to +85
CS
LWE
o
C
RAS
Timing Register
LCAS
CAS
- 3 -
ORDERING INFORMATION
• - I/P : Industrial temperature (-45
K4S643232E-TI/P60
K4S643232E-TI/P70
Latency & Burst Length
GENERAL DESCRIPTION
rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,
fabricated with SAMSUNG s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock. I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length and programmable latencies allow the same device
to be useful for a variety of high bandwidth, high performance
memory system applications.
Programming Register
WE
The K4S643232E is 67,108,864 bits synchronous high data
Data Input Register
Column Decoder
512K x 32
512K x 32
512K x 32
512K x 32
Part NO.
DQM
LWCBR
*
Samsung Electronics reserves the right to
change products or specification without
notice.
Max Freq.
166MHz
143MHz
o
C to +85
CMOS SDRAM
Rev. 1.2 (Oct. 2001)
LDQM
Interface
LVTTL
o
C)
LWE
LDQM
DQi
Package
TSOP(II)
86