GAL26CV12B-10LJ Lattice Semiconductor, GAL26CV12B-10LJ Datasheet - Page 7

• Manufacturer Part Number: GAL26CV12B-10LJ
• Description: High Performance E2CMOS PLD Generic Array Logic
• Manufacturer: Lattice Semiconductor

1) Refer to Switching Test Conditions section.
2) Calculated from fmax with internal feedback. Refer to fmax Specification section.
3) Refer to fmax Specification section.
*Characterized but not 100% tested.
PARAM
AC Switching Characteristics
Capacitance (T
f
t
t
t
max
t
t
t
t
t
t
t
t
t
t
arw
t
su
su
spr
wh
dis
arr
pd
co
cf
en
wl
ar
SYMBOL
h
2
1
2
3
C
C
I/O
COND.
I
TEST
—
—
—
—
—
—
—
—
—
C
A
A
A
A
A
B
A
1
Input or I/O to Comb. Output
Clock to Output Delay
Clock to Feedback Delay
Setup Time, Input or Fdbk before Clk
Setup Time, SP before Clock
Hold Time, Input or Fdbk after Clk
Maximum Clock Frequency with
External Feedback, 1/(tsu + tco)
Maximum Clock Frequency with
Internal Feedback, 1/(tsu + tcf)
Maximum Clock Frequency with
No Feedback
Clock Pulse Duration, High
Clock Pulse Duration, Low
Input or I/O to Output Enabled
Input or I/O to Output Disabled
Input or I/O to Asynch. Reset of Reg.
Asynchronous Reset Pulse Duration
Asynch. Reset to Clk
Synch. Preset to Clk
DESCRIPTION
A
= 25 C, f = 1.0 MHz)
Over Recommended Operating Conditions (Unless Otherwise Specified)
Input Capacitance
I/O Capacitance
PARAMETER
Recovery Time
Recovery Time
MAXIMUM*
8
8
7
Specifications GAL26CV12C
Specifications GAL26CV12
UNITS
pF
pF
MIN.
142.8
117.6
95.2
3.5
3.5
—
1
1
6
6
0
1
1
1
7
5
5
COM
-7
MAX.
V
7.5
4.5
2.5
7.5
7.5
TEST CONDITIONS
V
—
—
—
—
—
—
—
—
—
—
—
CC
9
CC
= 5.0V, V
= 5.0V, V
71.4
105
105
MIN. MAX.
10
—
1
1
7
7
0
4
4
1
1
1
8
8
IND
-10
I/O
I
= 2.0V
2.5
= 2.0V
10
—
—
—
—
—
—
—
—
10
13
—
—
—
7
9
UNITS
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns