HCS190D Intersil Corporation, HCS190D Datasheet

HCS190D

Manufacturer Part Number

HCS190D

Description

Radiation Hardened Synchronous 4-Bit Up/Down Counter

Manufacturer

Intersil Corporation

Datasheet

1.HCS190D.pdf (9 pages)

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September 1995

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Features

• 3 Micron Radiation Hardened SOS CMOS

• Total Dose 200K RAD (Si)

• SEP Effective LET No Upsets: >100 MEV-cm

• Single Event Upset (SEU) Immunity < 2 x 10

• Dose Rate Survivability: >1 x 10

• Dose Rate Upset >10

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55

• Signiﬁcant Power Reduction Compared to LSTTL ICs

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

• Input Current Levels Ii

Description

The Intersil HCS190MS is an asynchronously presettable BCD

Decade synchronous counter. Presetting the counter to the

number on the preset data inputs (P0 - P3) is accomplished by a

low on the parallel load input (PL). Counting occurs when (PL) is

high, Count Enable (CE) is low and the Up/Down (U/D) input is

either low for up-counting or high for down-counting. The counter

is incremented or decremented synchronously with the low-to-high

transition of the clock.

When an overﬂow or underﬂow of the counter occurs, the Terminal

Count output (TC), which is low during counting, goes high and

remains high for one clock cycle. This output can be used for look-

ahead carry in high speed cascading. The TC output also initiates

the Ripple Clock output (RC) which, normally high, goes low and

remains low for the low-level portion of the clock pulse. These

counter can be cascaded using the Ripple Carry output.

If the decade counter is preset to an illegal state or assumes an

illegal state when power is applied, it will return to the normal

sequence in one or two counts.

The HCS190MS utilizes advanced CMOS/SOS technology to

achieve high-speed operation. This device is a member of

radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS190MS is supplied in a 16 lead Ceramic ﬂatpack

(K sufﬁx) or a SBDIP Package (D sufﬁx).

Ordering Information

HCS190DMSR

HCS190KMSR

HCS190D/Sample

HCS190K/Sample

HCS190HMSR

(Typ)

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

PART NUMBER

RAD (Si)/s 20ns Pulse

5 A at VOL, VOH

TEMPERATURE RANGE

C to +125

RAD (Si)/s

-55

C to +125

+25

-9

/mg

Errors/Bit-Day

260

Intersil Class S Equivalent

Sample

Die

SCREENING LEVEL

Pinouts

H = High Voltage Level

L = Low Voltage Level

GND

Radiation Hardened Synchronous

U/D

HCS190MS

FLATPACK PACKAGE (FLATPACK)

16 LEAD CERAMIC DUAL-IN-LINE

16 LEAD CERAMIC METAL SEAL

METAL SEAL PACKAGE (SBDIP)

GND

INPUTS

U/D

MIL-STD-1835 CDFP4-F16

MIL-STD-1835 CDIP2-T16

4-Bit Up/Down Counter

TRUTH TABLE

U/D

TOP VIEW

16 Lead SBDIP

16 Lead Ceramic Flatpack

16 Lead SBDIP

16 Lead Ceramic Flatpack

Die

X = Immaterial

Spec Number

=Positive Transistion

File Number

PACKAGE

VCC

Count Up

Count Down

Preset

No Change

FUNCTION

OUTPUT

518836

2251.2

VCC

Related parts for HCS190D

HCS190D Summary of contents

Page 1

... The HCS190MS is supplied lead Ceramic ﬂatpack (K sufﬁ SBDIP Package (D sufﬁx). Ordering Information PART NUMBER TEMPERATURE RANGE HCS190DMSR HCS190KMSR HCS190D/Sample HCS190K/Sample HCS190HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HCS190MS Radiation Hardened Synchronous ...

Page 2

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...

Page 3

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Propagation Delay TPLH VCC = 4.5V, VIH = 4.5V, VIL = TPHL VCC = 4.5V, VIH = 4.5V, VIL = TPLH VCC = 4.5V, ...

Page 4

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Capacitance Power CPD VCC = 5.0V, VIH = 5.0V, Dissipation VIL = 0V 1MHz Input Capacitance CIN VCC = 5.0V, VIH = 5.0V, VIL = 0V 1MHz Setup Time ...

Page 5

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Output Voltage High VOH VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOH = -50 A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOH = -50 A ...

Page 6

CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate group A testing in ...

Page 7

... All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speciﬁcations at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use ...

Page 8

Propagation Delay Timing Diagram VIH INPUT VS VSS TPLH VOH VS OUTPUT VOL Transition Timing Diagram TTLH VOH 80% 20% OUTPUT VOL VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VIL 0 GND 0 Pulse Width, Setup, Hold ...

Page 9

Die Characteristics DIE DIMENSIONS: 104 x 86 (mils) 2.65 x 2.19 (mm) METALLIZATION: Type Å Å Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 ...

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