HCS138DTR Intersil Corporation, HCS138DTR Datasheet - Page 3

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HCS138DTR

Manufacturer Part Number
HCS138DTR
Description
Radiation Hardened Inverting 3-to-8 Line Decoder/Demultiplexer
Manufacturer
Intersil Corporation
Datasheet
Die Characteristics
DIE DIMENSIONS:
METALLIZATION:
SUBSTRATE POTENTIAL:
BACKSIDE FINISH:
Metallization Mask Layout
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The
mask series for the HCS138 is TA14361A.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
(2159 m x 2565 m x 533 m 51 m)
85 x 101 x 21mils 2mil
Type: Al Si
Thickness: 11.0k
Unbiased Silicon on Sapphire
Sapphire
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Å
1k
Å
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A2 (3)
E1 (4)
E2 (5)
E3 (6)
3
NC
NC
(7)
Y7
A1
(2)
GND
(8)
A0
(1)
HCS138T
HCS138T
V
(16)
(9)
Y6
CC
PASSIVATION:
WORST CASE CURRENT DENSITY:
TRANSISTOR COUNT:
PROCESS:
Type: Silox (S
Thickness: 13.0k
< 2.0e5 A/cm
264
CMOS SOS
(15)
Y0
(10)
Y5
2
i
O
2
Å
)
2.6k
(14) Y1
NC
(13) Y2
(12) Y3
(11) Y4
NC
Å

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