DG9431DV Vishay Siliconix, DG9431DV Datasheet - Page 2

• Manufacturer Part Number: DG9431DV
• Description: Low-Voltage Single SPDT Analog Switch
• Manufacturer: Vishay Siliconix

DG9431
Vishay Siliconix
Reference to GND
V+
IN, COM, NC, NO
Continuous Current (Any terminal)
Peak Current
(Pulsed at 1ms, 10% duty cycle)
ESD (Method 3015.7)
Notes:
a.
b.
c.
d.
e.
f.
g.
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4-2
Analog Switch
Analog Signal Range
Drain-Source On-Resistance
r
r
NO or NC Off Leakage Current
COM Off Leakage Current
Channel-On Leakage Current
Digital Control
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
Off-Isolation
Source-Off Capacitance
Channel-On Capacitance
Power Supply
Power Supply Range
Power Supply Current
DS(on)
DS(on)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Room = 25 C, Full = as determined by the operating suffix.
Typical values are for design aid only, not guaranteed nor subject to production testing.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guarantee by design, nor subjected to production test.
V
Difference of min and max values.
Guaranteed by 5-V leakage testing, not production tested.
IN
Match
Flatness
= input voltage to perform proper function.
d
P
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
f
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
g
g
g
. . . . . . . . . . . . . . . . . . . . . . . . . . .
S
Symbol
I
I
V
Flatness
NO/NC(off)
INL
I
I
r
COM(off)
COM(on)
ANALOG
r
C
C
DS(on)
OIRR
DS(on)
r
t
Q
DS(on)
t
OFF
D(on)
S(off)
V+
or I
ON
I+
t
INJ
d
b l
INH
-0.3 to (V+ + 0.3 V)
V
V
-0.3 to +13 V
Otherwise Unless Specified
NO
COM
V+ = 3 V,
C
R
V
or V
V
L
> 2000 V
NO
COM
= 1 nF, Vgen = 0 V, Rgen = 0
L
= 1 V / 2 V, V
20 mA
40 mA
= 50 , C
V
NC
Test Conditions
or V
NO
V
V
V
= V
NO
NO
= 1 V / 2 V, V
V+ = 3.3 V, V
or V
NC
I
10%, V
COM
NO
or V
or V
f = 1 MHz
f = 1 MHz
= 1.5 V, V+ = 2.7 V
NC
L
or V
V
= 5 pF, f = 1 MHz
= 5 mA
NC
NO
NC
= 1 and 2 V
IN
NC
= 1.5 V
or V
= 1.5 V
Storage Temperature (D Suffix)
Power Dissipation (Packages)
8-Pin Narrow Body SOIC
Notes:
a.
b.
c.
= 0.8 or 2.4 V
1 5 V
COM
= 1 V / 2 V
IN
NC
= 0 or 3.3 V
Signals on S
diodes. Limit forward diode current to maximum current ratings.
All leads welded or soldered to PC Board.
Derate 6.5 mW/ C above 75 C
= 2 V / 1 V
= 2 V / 1 V
e
X
, D
X
T
Temp
, or IN
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
X
a
a
b
exceeding V+ or V- will be clamped by internal
. . . . . . . . . . . . . . . . . . . . . . . . . . .
–10000
Min
–5000
–5000
-100
-100
-200
2.7
0
3
c
–40 to 85 C
D Suffix
Typ
–74
0.4
30
10
50
20
20
32
4
5
5
1
1
7
S-63598—Rev. B, 26-Jul-99
Document Number: 70831
b
Max
10000
5000
5000
100
100
200
120
200
120
50
80
50
12
3
2
8
5
1
-65 to 125 C
c
400 mW
Unit
pC
pA
dB
pF
pF
ns
V
V
A
A
A