AT42070 Agilent(Hewlett-Packard), AT42070 Datasheet

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AT42070

Manufacturer Part Number
AT42070
Description
Up to 6 GHz Medium Power Silicon Bipolar Transistor
Manufacturer
Agilent(Hewlett-Packard)
Datasheet
1.AT42070.pdf (5 pages)
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
Features
• High Output Power:
• High Gain at 1 dB
• Low Noise Figure:
• High Gain-Bandwidth
• Hermetic Gold-ceramic
Description
Hewlett-Packard’s AT-42070 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42070 is housed in a hermetic,
high reliability gold-ceramic 70 mil
microstrip package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
5965-8912E
21.0 dBm Typical P
20.5 dBm Typical P
Compression:
15.0 dB Typical G
10.0 dB Typical G
1.9 dB Typical NF
Product: 8.0 GHz Typical f
Microstrip Package
1 dB
1 dB
O
1 dB
1 dB
at 2.0 GHz
at 2.0 GHz
at 4.0 GHz
at 4.0 GHz
at 2.0 GHz
T
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near
50
device easy to use as a low noise
amplifier.
The AT-42070 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
up to 1 GHz, makes this
T
Self-Aligned-Transistor
4-164
AT-42070
70 mil Package

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AT42070 Summary of contents

Page 1

GHz Medium Power Silicon Bipolar Transistor Technical Data Features • High Output Power: 21.0 dBm Typical P at 2.0 GHz 1 dB 20.5 dBm Typical P at 4.0 GHz 1 dB • High Gain ...

Page 2

AT-42070 Absolute Maximum Ratings Symbol Parameter V Emitter-Base Voltage EBO V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO I Collector Current C [2,3] P Power Dissipation T T Junction Temperature j T Storage Temperature STG Electrical Specifications, T Symbol Parameters ...

Page 3

AT-42070 Typical Performance 1.0 GHz 16 2.0 GHz 12 8 4.0 GHz (mA) C Figure 1. Insertion Power Gain vs. Collector Current and Frequency ...

Page 4

AT-42070 Typical Scattering Parameters, Common Emitter Freq GHz Mag. Ang. 0.1 .70 -49 28.5 0.5 .69 -137 21.5 1.0 .69 -165 16.0 1.5 .68 -179 12.7 2.0 ...

Page 5

Package Dimensions .040 1.02 4 EMITTER BASE COLLECTOR 1 3 Notes: (unless otherwise specified) 2 EMITTER 1. Dimensions are in 2. Tolerances in .xxx = mm .xx = .070 .004 .002 1.70 .10 .05 .495 .030 .035 12.57 ...

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