FSL13A0D3 INTERSIL [Intersil Corporation], FSL13A0D3 Datasheet

FSL13A0D3

Manufacturer Part Number

FSL13A0D3

Description

9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Manufacturer

INTERSIL [Intersil Corporation]

Datasheet

1.FSL13A0D3.pdf (8 pages)

Current page: 1 of 8
Download datasheet (75Kb)

9A, 100V, 0.180 Ohm, Rad Hard, SEGR

Resistant, N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developed a

series of Radiation Hardened MOSFETs speciﬁcally

designed for commercial and military space applications.

Enhanced Power MOSFET immunity to Single Event Effects

(SEE), Single Event Gate Rupture (SEGR) in particular, is

combined with 100K RADS of total dose hardness to provide

devices which are ideally suited to harsh space

environments. The dose rate and neutron tolerance

necessary for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, motor drives,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Ordering Information

Formerly available as type TA17696.

10K

100K

RAD LEVEL

Commercial

TXV

Commercial

TXV

Space

SCREENING LEVEL PART NUMBER/BRAND

4-1

Data Sheet

FSL13A0D1

FSL13A0D3

FSL13A0R1

FSL13A0R3

FSL13A0R4

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Features

• 9A, 100V, r

• Total Dose

• Single Event

• Dose Rate

• Photo Current

• Neutron

Symbol

Package

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

- 1.5nA Per-RAD(Si)/s Typically

- Maintain Pre-RAD Speciﬁcations

- Usable to 3E14 Neutrons/cm

for 3E13 Neutrons/cm

up to 80% of Rated Breakdown and

of 10V Off-Bias

June 1999

DS(ON)

FSL13A0D, FSL13A0R

= 0.180

TO-205AF

File Number

with

DSS

4480.2

Related parts for FSL13A0D3

FSL13A0D3 Summary of contents

Page 1

... MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data sheet. Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSL13A0D1 10K TXV FSL13A0D3 100K Commercial FSL13A0R1 100K TXV FSL13A0R3 100K Space FSL13A0R4 Formerly available as type TA17696. ...

Page 2

Absolute Maximum Ratings T C Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Source to Drain Diode Speciﬁcations PARAMETER SYMBOL Forward Voltage V Reverse Recovery Time Electrical Speciﬁcations up to 100K RAD PARAMETER Drain to Source Breakdown Volts (Note 3) Gate to Source Threshold Volts (Note 3) Gate to Body Leakage (Notes 2, ...

Page 4

Typical Performance Curves - CASE TEMPERATURE ( C FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE Q 12V CHARGE BASIC GATE CHARGE ...

Page 5

Typical Performance Curves Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN CURRENT I AS TRANSFORMER - VARY t TO OBTAIN P 50 REQUIRED PEAK 20V FIGURE 9. ...

Page 6

Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current On Resistance Gate ...

Page 7

Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. RAD HARD TXV EQUIVALENT - STANDARD DATA PACKAGE A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet ...

Page 8

TO-205AF 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE ØD Ø Ø All Intersil semiconductor products are manufactured, assembled and tested under ...

Related keywords

FSL13A0D3 datasheet
FSL13A0D3 data sheet
FSL13A0D3 pdf datasheet
FSL13A0D3 component
FSL13A0D3 part
FSL13A0D3 distributor
FSL13A0D3 RoHS
FSL13A0D3 datasheet download