SI9433BDY-E3 VISHAY [Vishay Siliconix], SI9433BDY-E3 Datasheet - Page 4

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SI9433BDY-E3

Manufacturer Part Number
SI9433BDY-E3
Description
P-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
www.vishay.com
4
Si9433BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.2
−0.4
0.6
0.4
0.2
0.0
−50
0.01
0.1
2
1
10
−25
−4
0.05
0.2
0.1
Duty Cycle = 0.5
0.02
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
−3
Single Pulse
50
I
D
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
10
0.1
1
0.1
100
r
10
DS(on)
Limited
I
−2
D(on)
Single Pulse
T
125
A
Limited
V
= 25_C
DS
1
Square Wave Pulse Duration (sec)
150
− Drain-to-Source Voltage (V)
Safe Operating Area
BV
New Product
DSS
10
Limited
−1
I
DM
10
Limited
50
40
30
20
10
1
0.001
0
1 ms
10 ms
100 ms
1 s
10 s
dc
100
0.01
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (sec)
− T
t
A
1
= P
t
0.1
2
DM
Z
S-40242—Rev. A, 16-Feb-04
thJA
100
thJA
Document Number: 72755
t
t
1
2
(t)
= 80_C/W
1
600
10

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