SIA920DJ VISHAY [Vishay Siliconix], SIA920DJ Datasheet - Page 4

• Manufacturer Part Number: SIA920DJ
• Description: Dual N-Channel 8 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SiA920DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
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4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.8
0.7
0.6
0.5
0.4
0.3
0.2
100
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
0
SD
Threshold Voltage
T
- Source-to-Drain Voltage (V)
J
T
0.4
= 150 °C
J
25
- Temperature (°C)
50
0.6
75
I
D
T
= 250 μA
0.8
J
= 25 °C
0.01
100
100
0.1
10
1
0.1
Safe Operating Area, Junction-to-Ambient
1.0
This document is subject to change without notice.
125
Limited by R
* V
T
A
GS
= 25 °C
> minimum V
150
1.2
V
DS
- Drain-to-Source Voltage (V)
DS(on)
New Product
1
*
GS
at which R
DS(on)
10
100 ms
100 μs
1 ms
10 ms
1 s
10 s
DC
0.08
0.06
0.04
0.02
0.00
is specified
15
20
10
0.001
BVDSS Limited
5
0
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
2
Pulse (s)
1
T
J
T
= 25 °C
J
= 125 °C
3
S11-1381-Rev. A, 11-Jul-11
Document Number: 63299
10
www.vishay.com/doc?91000
I
D
4
= 5.3 A
100
1000
5