VN0120N2 SUTEX [Supertex, Inc], VN0120N2 Datasheet
VN0120N2
Manufacturer Part Number
VN0120N2
Description
N-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
1.VN0120N2.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VN0120N2
Manufacturer:
ST/MOTO
Quantity:
20 000
Ordering Information
† MIL visual screening available
Features
■ ■
■ ■
■ ■
■ ■
■ ■
■ ■
■ ■
■ ■
Applications
■ ■
■ ■
■ ■
■ ■
■ ■
■ ■
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
BV
BV
-200V
DSS
DGS
ISS
and fast switching speeds
/
R
(max)
DS(ON)
25Ω
-100mA
P-Channel Enhancement-Mode
Vertical DMOS FETs
(min)
I
D(ON)
-55°C to +150°C
BV
BV
300°C
± 20V
DGS
DSS
VP0120N3
Order Number / Package
TO-92
7-223
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
VP0120ND
Die
†
TO-92
S G D
VP0120
7
9
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VN0120N2 Summary of contents
Page 1
Ordering Information DSS DS(ON) BV (max) DGS -200V 25Ω † MIL visual screening available Features ■ ■ Free from secondary breakdown ■ ■ Low power drive requirement ■ ■ Ease of paralleling ■ ■ Low C and ...
Page 2
Thermal Characteristics Package I (continuous)* D TO-92 -0. (continuous) is limited by max rated Electrical Characteristics Symbol Parameter BV Drain-to-Source DSS Breakdown Voltage V Gate Threshold Voltage GS(th) ∆V Change in V with Temperature ...
Page 3
Typical Performance Curves Output Characteristics -1 -10V GS -0.8 -0.6 -0.4 -0 -10 -20 -30 V (volts) DS Transconductance vs. Drain Current 140 V = -25V DS 120 100 -0.2 -0.4 -0.6 ...
Page 4
Typical Performance Curves BV Variation with Temperature DSS 1.10 1.06 1.02 0.98 0.94 0.90 - (°C) j Transfer Characteristics -1 -25V DS -0.8 -0.6 -0 (volts) GS ...