SI6981DQ-T1 VISHAY [Vishay Siliconix], SI6981DQ-T1 Datasheet
SI6981DQ-T1
Manufacturer Part Number
SI6981DQ-T1
Description
Dual P-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.SI6981DQ-T1.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI6981DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 868
Part Number:
SI6981DQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 72226
S-31065—Rev. A, 26-May-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
- 20
G
D
S
S
(V)
1
1
1
1
J
Ordering Information: Si6981DQ T-1
1
2
3
4
ti
D
t A bi
TSSOP-8
Top View
J
J
a
a
0.031 @ V
0.041 @ V
0.058 @ V
= 150_C)
= 150_C)
t
a
a
Parameter
Parameter
r
DS(on)
Dual P-Channel 20-V (D-S) MOSFET
GS
GS
GS
a
a
(W)
= - 4.5 V
= - 2.5 V
= - 1.8 V
8
7
6
5
D
S
S
G
a
2
2
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
New Product
I
= 25_C
= 70_C
= 25_C
= 70_C
D
- 4.8
- 4.2
- 3.5
(A)
G
1
P-Channel MOSFET
Symbol
Symbol
T
R
R
R
V
J
V
I
P
P
DM
, T
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
S
D
1
1
FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
D Battery Switch
10 secs
Typical
1.14
0.73
- 4.8
- 3.9
- 1.0
124
86
59
G
2
P-Channel MOSFET
- 55 to 150
- 20
"8
- 30
Steady State
S
D
Maximum
2
2
Vishay Siliconix
0.83
0.53
- 4.1
- 3.2
- 0.7
110
150
75
Si6981DQ
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1
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