SI7923DN_06 VISHAY [Vishay Siliconix], SI7923DN_06 Datasheet - Page 2

• Manufacturer Part Number: SI7923DN_06
• Description: Dual P-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SPICE Device Model Si7923DN
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
V
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
g
t
t
SD
fs
gs
gd
r
f
g
V
DS
I
D
= −15 V, V
≅ −1 A, V
V
V
V
V
V
V
I
DS
GS
DS
DS
Test Condition
S
DD
GS
= −2.3 A, V
= −5 V, V
= −10 V, I
= −15 V, I
= V
= −15 V, R
= −4.5 V, I
GEN
GS
GS
, I
= −10 V, I
= −10 V, R
D
= −250 µA
GS
D
D
GS
D
L
= −6.4 A
= −6.4 A
= −10 V
= −5 A
= 15 Ω
= 0 V
D
G
= −6.4 A
= 6 Ω
Simulated
Data
0.038
0.059
−0.82
2.4
3.8
24
13
13
11
40
12
2
8
Measured
S-60244Rev. B, 20-Feb-06
Data
0.038
0.060
−0.80
Document Number: 72682
2.4
3.8
13
14
10
12
38
28
Unit
nC
ns
V
A
Ω
S
V