SI7900AEDN_08 VISHAY [Vishay Siliconix], SI7900AEDN_08 Datasheet

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SI7900AEDN_08

Manufacturer Part Number
SI7900AEDN_08
Description
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72287
S-81544-Rev. C, 07-Jul-08
Ordering Information: Si7900AEDN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
DS
20
(V)
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
8
3.30 mm
D
7
D
Si7900AEDN-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.026 at V
0.030 at V
0.036 at V
6
PowerPAK 1212-8
D
R
5
DS(on)
Bottom View
J
a
D
= 150 °C)
a
GS
GS
GS
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
1
S1
a
2
G1
3
S2
a
3.30 mm
4
G2
A
I
= 25 °C, unless otherwise noted
D
8.5
Steady State
Steady State
8
7
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• New PowerPak
• 3000 V ESD Protection
• Protection Switch for 1-2 Li-ion Batteries
G
Symbol
Symbol
1
T
R
R
J
- Low Thermal Resistance, R
- Low 1.07 mm Profile
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
2.6 kΩ
N-Channel
®
Power MOSFET: 1.8 V Rated
Typical
®
10 s
8.5
6.4
2.9
3.1
1.6
2.2
32
65
Package
D
- 55 to 150
S
1
1
± 12
20
30
Steady State
Maximum
G
thJC
2
0.79
4.3
1.4
1.5
2.8
40
82
Si7900AEDN
Vishay Siliconix
6
2.6 kΩ
N-Channel
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
D
S
2
2
1

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SI7900AEDN_08 Summary of contents

Page 1

Dual N-Channel 20-V (D-S) MOSFET, Common Drain PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.026 4 0.030 2 0.036 1 PowerPAK 1212-8 S1 ...

Page 2

Si7900AEDN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b ...

Page 3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.06 0.05 0.04 0. 1.8 V ...

Page 4

Si7900AEDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 0.04 0.03 0.02 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 200 160 120 0.001 0.01 0.1 Time ...

Page 5

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. ...

Page 6

PowerPAK 1212-8, (SINGLE/DUAL Notes: 1. Inch will govern 2 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs DIM. MIN. A 0.97 A1 0.00 b ...

Page 7

PowerPAK 1212 Mounting and Thermal Considerations Johnson Zhao MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over ...

Page 8

AN822 Vishay Siliconix PowerPAK 1212 DUAL To take the advantage of the dual PowerPAK 1212-8’s thermal performance, the minimum recommended land pattern can be found in Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix ...

Page 9

TABLE 1: EQIVALENT STEADY STATE PERFORMANCE Package Configuration Single Thermal Resiatance R (C/W) thJC PowerPAK 1212 49.8 °C 2.4 °C/W PC Board at 45 °C THERMAL PERFORMANCE Introduction A basic measure of a device’s thermal performance is the junction-to-case thermal ...

Page 10

AN822 Vishay Siliconix 105 Spreading Copper (sq. in 100 % 0.00 0.25 0.50 0.75 1.00 Figure 5. Spreading Copper - Si7401DN CONCLUSIONS As a derivative of the PowerPAK SO-8, the PowerPAK 1212-8 ...

Page 11

RECOMMENDED MINIMUM PADS FOR PowerPAK 0.039 (0.990) 0.016 (0.405) 0.026 (0.660) Return to Index Return to Index Document Number: 72597 Revision: 21-Jan-08 Application Note 826 ® 1212-8 Single 0.152 (3.860) 0.068 (1.725) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions ...

Page 12

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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