SI6901DQ VISHAY [Vishay Siliconix], SI6901DQ Datasheet - Page 2

• Manufacturer Part Number: SI6901DQ
• Description: Bi-Directional P-Channel 12-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SPICE Device Model Si6901DQ
Vishay Siliconix
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
a
Parameter
b
b
J
= 25°C UNLESS OTHERWISE NOTED)
b
Symbol
V
r
I
t
t
DS(on)
Q
Q
GS(th)
D(on)
d(on)
d(off)
g
Q
t
t
fs
gs
gd
r
f
g
V
DS
I
D
= − 6 V, V
≅ − 1 A, V
V
V
V
V
V
V
Test Conditions
DS
GS
GS
GS
V
DS
DS
DD
= −5 V, V
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= −10 V, I
= V
= − 6 V, R
GS
GEN
GS
= − 4.5 V, I
, I
= − 4.5 V, R
D
GS
= −250 µA
D
D
D
D
= −5.4 A
L
= −4.5 V
= −5.4 A
= −4.8 A
= −3.5 A
= 6 Ω
D
= − 5.4 A
G
= 6 Ω
Simulated
Data
0.027
0.034
0.045
0.66
10.5
133
230
354
21
64
34
91
46
Measured
Data
0.026
0.034
0.046
10.5
Document Number: 72915
110
310
210
270
30
80
34
Unit
23-May-04
nC
ns
Ω
V
A
S