SI7456DDP VISHAY [Vishay Siliconix], SI7456DDP Datasheet - Page 4

• Manufacturer Part Number: SI7456DDP
• Description: N-Channel 100 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si7456DDP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
0.01
- 0.1
- 0.4
- 0.7
- 1.0
100
0.1
0.5
0.2
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
T
J
0.2
= 150 °C
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 μA
75
For technical questions, contact:
0.8
0.01
100
0.1
10
T
100
1
I
J
0.01
D
= 25 °C
= 5 mA
I
1.0
Limited by R
D
Safe Operating Area, Junction-to-Ambient
This document is subject to change without notice.
T
Single Pulse
* V
I
Limited
125
DM
A
= 25 °C
GS
Limited
> minimum V
150
V
1.2
DS
0.1
DS(on)
- Drain-to-Source Voltage (V)
New Product
*
GS
at which R
1
[e-mail]
BVDSS Limited
DS(on)
0.15
0.12
0.09
0.06
0.03
0.00
200
160
120
80
40
0
0.001
is specified
10
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
2
V
100
0.01
GS
1 ms
100 ms
10 ms
1 s
10 s
DC
- Gate-to-Source Voltage (V)
T
J
= 25 °C
4
Time (s)
0.1
6
S12-1261-Rev. A, 21-May-12
T
J
Document Number: 67869
= 125 °C
www.vishay.com/doc?91000
I
1
D
= 15 A
8
10
10