SI7450DP_06 VISHAY [Vishay Siliconix], SI7450DP_06 Datasheet - Page 2

• Manufacturer Part Number: SI7450DP_06
• Description: N-Channel 200-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SPICE Device Model Si7450DP
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
V
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
g
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
I
DS
D
I
≅ 4 A, V
F
= 100 V, V
V
V
= 2.8 A, di/dt = 100 A/µs
V
Test Condition
I
DD
V
DS
V
S
DS
V
GS
DS
= 2.8 A, V
GS
= 100 V, R
= V
≥ 5 V, V
= 10 V, I
= 15 V, I
= 6 V, I
GEN
GS
GS
, I
= 10 V, R
D
= 10 V, I
GS
= 250 µA
D
GS
D
D
L
= 4 A
= 10 V
= 5 A
= 4 A
= 0 V
= 25 Ω
G
D
= 6 Ω
= 4 A
Simulated
Data
0.068
0.072
0.76
7.5
74
23
35
12
27
39
39
55
70
3
Measured
S-60145Rev. B, 13-Feb-06
Data
0.065
0.070
0.75
7.5
19
34
12
14
20
32
25
70
Document Number: 70705
Unit
nC
ns
Ω
V
A
S
V