2SK3506_06 TOSHIBA [Toshiba Semiconductor], 2SK3506_06 Datasheet

2SK3506_06

Manufacturer Part Number

2SK3506_06

Description

Silicon N Channel MOS Type Relay Drive and DC-DC Converter Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3506_06.pdf (3 pages)

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Relay Drive and DC-DC Converter Applications

Motor Drive Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement model: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 μH, IAR = 45 A, RG = 25 Ω

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

Pulse (Note 1)

= 20 kΩ)

DSS

(Note 1)

(Note 2)

= 1.5 to 3.0 V (V

= 100 μA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

DSS

GSS

| = 26 S (typ.)

stg

2SK3506

Symbol

th (ch-a)

th (ch-c)

= 16 mΩ (typ.)

= 10 V, I

= 30 V)

−55 to150

Rating

±20

135

100

220

150

Max

1.25

= 1 mA)

Unit

°C/W

°C

Unit

Weight: 4.6 g (typ.)

JEDEC

JEITA

TOSHIBA

2-16C1B

SC-65

2006-11-16

―

2SK3506

Unit: mm

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