2SK3502 FUJI [Fuji Electric], 2SK3502 Datasheet
2SK3502
Manufacturer Part Number
2SK3502
Description
N CHANNEL SILICON POWER MOSET
Manufacturer
FUJI [Fuji Electric]
Datasheet
1.2SK3502.pdf
(4 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3502-01
Manufacturer:
Fuji
Quantity:
6 600
Company:
Part Number:
2SK3502-01MR
Manufacturer:
FUJITSU
Quantity:
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Part Number:
2SK3502-01MR
Manufacturer:
FUJI/富士电机
Quantity:
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Company:
Part Number:
2SK3502-01MR-80
Manufacturer:
FUJI
Quantity:
4 250
2SK3502-01MR
Super FAP-G Series
*4 VDS 600V
*1 L=3.99mH, Vcc=60V
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
< =
off
on
*2 Tch 150°C
= <
c
=25°C unless otherwise specified)
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR *2
Symbol
ch
stg
AS *1
D
DS
GS
DS
*3 I
R
R
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
r
f
rr
I
/dt
fs
DSS
(BR)DSS
GS(th)
oss
*3
DS(on)
iss
rss
G
GS
GD
SD
(on)
(off)
rr
F
= <
*4
-I
D
, -di/dt=50A/µs, Vcc BV
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
V
V
R
Test Conditions
I
I
V
V
f=1MHz
V
I
V
L=3.99mH T
I
I
-di/dt=100A/µs
V
V
V
I
I
channel to ambient
channel to case
D
D
D
F
F
D
D
CC
GS
+150
DS
GS
GS
GS
DS
DS
GS
CC
=10A V
=10A V
=1mA
= 250 µ A
=10A
=5A
=5A
600
±10
±40
±30
217
=300V I
=10V
=10
10
20
50
=600V V
=480V V
=±30V
=25V
=0V
=10V
=250V
5
2.16
V
N-CHANNEL SILICON POWER MOSFET
V
GS
GS
DS
GS
V
V
= <
ch
=0V T
=10V
=25V
D
=0V
GS
DS
GS
GS
=5A
V
=25°C
DS
=0V
=0V
=0V
=0V
T
DSS
=V
ch
ch
=25°C
kV/µs
kV/µs
W
°C
°C
Unit
mJ
, Tch 150°C
GS
V
A
A
V
A
=25°C
T
T
= <
ch
ch
=125°C
=25°C
TO-220F
Outline Drawings
FUJI POWER MOSFET
Equivalent circuit schematic
Gate(G)
Min.
Min.
600
10
3.0
4
1200
Typ.
Typ.
140
10
17
15
35
30
10
11
0.58
8
6
7
1.00
0.75
5.0
Source(S)
Drain(D)
1800
Max.
250
100
210
58.0
Max.
25
26
23
53
45
16.5
15
11
2.5
5.0
0.75
9
1.50
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1
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2SK3502 Summary of contents
Page 1
... Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current I D Pulsed drain current ...
Page 2
... Characteristics Allowable Power Dissipation PD=f(Tc Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25° VDS [V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C ...
Page 3
... Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 2.0 1.8 1.6 1.4 1.2 1.0 max. 0.8 0.6 0.4 0.2 0.0 -50 - Tch [ C] Typical Gate Charge Characteristics VGS=f(Qg):ID=10A, Tch=25° Vcc= 120V 18 300V 16 480V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C ...
Page 4
... Transient Thermal Impedance Zth(ch-c)=f(t):D=t D=0 0.2 0.1 0. 0.02 0. Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch=25°C. Vcc=60V Single Pulse [sec ...