2SK3471_06 TOSHIBA [Toshiba Semiconductor], 2SK3471_06 Datasheet
2SK3471_06
Manufacturer Part Number
2SK3471_06
Description
Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK3471_06.pdf
(3 pages)
Switching Regulator and DC-DC Converter Applications
•
•
•
•
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement model: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
= 90 V, T
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
DSS
th
= 25°C (initial), L = 100 mH, R
= 2.0 to 4.0 V (V
(Note 1)
(Note 2)
(Note 3)
= 100 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
DGR
P
P
DSS
GSS
DP
AR
I
| = 0.4 S (typ.)
AS
AR
stg
D
ch
R
D
D
2SK3471
Symbol
th (ch-a)
DS
= 10 Ω (typ.)
DS
= 10 V, I
= 500 V)
−55 to150
Rating
14.3
0.05
500
500
±30
150
0.5
1.5
0.5
1.5
0.5
D
1
G
Max
250
= 1 mA)
= 25 Ω, I
AR
Unit
mJ
mJ
°C/W
°C
°C
W
W
V
V
V
A
A
Unit
= 0.5 A
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
2-5K1B
SC-62
2006-11-02
―
2SK3471
Unit: mm
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2SK3471_06 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator and DC-DC Converter Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • ...
Page 2
Marking Z G Lot No. Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise ...
Page 3
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...