2SK3468-01_03 FUJI [Fuji Electric], 2SK3468-01_03 Datasheet

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2SK3468-01_03

Manufacturer Part Number
2SK3468-01_03
Description
N-CHANNEL SILICON POWER MOSFET
Manufacturer
FUJI [Fuji Electric]
Datasheet
1.2SK3468-01_03.pdf (4 pages)
2SK3468-01
Super FAP-G Series
*3 I
*1 L=1.76mH, Vcc=50V, See to Avalanche Energy Graph
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
F
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
<
=-I
D
, -di/dt=50A/µs, Vcc=BV
off
on
<
DSS
c
, Tch=150°C
=25°C unless otherwise specified)
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR *2
Symbol
ch
stg
AS *1
D
DS
GS
<
DS
R
R
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
f
I
r
rr
/dt
fs
GS(th)
DSS
*3
(BR)DSS
DS(on)
iss
oss
rss
G
GS
SD
GD
rr
(on)
(off)
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
V
V
R
*2 Tch=150°C
V
V
V
I
I
channel to ambient
Test Conditions
I
I
V
V
f=1MHz
V
I
V
L=1.76mH T
I
I
-di/dt=100A/µs
channel to case
D
D
D
D
D
F
F
+150
CC
GS
GS
DS
DS
GS
DS
GS
CC
GS
=6A
=6A
=12A V
=12A V
=250 µ A
= 250 µ A
=12A
500
±14
±56
±30
188.2
195
=10
14
20
=500V V
=400V V
=300V I
=10V
=±30V
=25V
=0V
=250V
=10V
5
2.02
<
V
N-CHANNEL SILICON POWER MOSFET
V
GS
DS
GS
GS
V
D
=10V
=25V
ch
=0V T
=0V
GS
GS
DS
=6A
V
=25°C
V
DS
GS
=0V
=0V
=0V
T
=V
=0V
ch
kV/µs
kV/µs
W
°C
°C
ch
Unit
=25°C
mJ
V
A
A
V
A
GS
=25°C
T
T
ch
ch
=25°C
=125°C
FUJI POWER MOSFET
TO-220AB
Equivalent circuit schematic
Outline Drawings [mm]
Gate(G)
Min.
Min.
500
14
3.0
5.5
1200
Typ.
Typ.
140
10
17
15
34
30
10
11
11
0.40
6.0
7
1.00
0.7
4.5
Source(S)
Drain(D)
1800
Max.
250
100
210
62.0
Max.
25
26
23
51
45
15
16.5
11
0.641
5.0
0.52
9.0
1.50
Units
Units
°C/W
°C/W
200303
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1

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2SK3468-01_03 Summary of contents

Page 1

... Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current I D Pulsed drain current ...

Page 2

... Characteristics Allowable Power Dissipation PD=f(Tc) 250 200 150 100 Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25° VDS [V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C ...

Page 3

... Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 1.4 1.3 1.2 1.1 1.0 0.9 0.8 max. 0.7 0.6 typ. 0.5 0.4 0.3 0.2 0.1 0.0 -50 - Tch [ C] Typical Gate Charge Characteristics VGS=f(Qg):ID=12A, Tch=25° Vcc= 120V 18 300V 16 480V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C ...

Page 4

... Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D Maximum Avalanche Current vs Pulse width I =f(t ):starting Tch=25 C,Vcc=50V Single Pulse http://www.fujielectric.co.jp/denshi/scd [sec] ...

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