2SK3439_09 TOSHIBA [Toshiba Semiconductor], 2SK3439_09 Datasheet

2SK3439_09

Manufacturer Part Number

2SK3439_09

Description

DC-DC Converter Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3439_09.pdf (6 pages)

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DC-DC Converter Applications

Relay Drive and Motor Drive Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

= 24 V, T

Characteristics

Pulse (t

DSS

= 20 kΩ)

= 1.3 to 2.5 V (V

= 25°C (initial), L = 100 μH, R

= 100 µA (max) (V

(Note 2)

(Note 1)

< =

1 ms)

DS (ON)

(Ta = 25°C)

| = 70 S (typ.)

Symbol

DGR

GSS

DSS

stg

2SK3439

= 3.8 mΩ (typ.)

= 10 V, I

Symbol

th (ch-c)

= 30 V)

−55 to 150

Rating

12.5

±20

300

125

731

150

= 1 mA)

= 25 Ω, I

Max

1.00

°C/W

Unit

°C

= 75 A

Weight: 0.74 g (typ.)

JEDEC

JEITA

TOSHIBA

Notice:

Please use the S1 pin for gate

input signal return. Make

sure that the main current

flows into the S2 pin.

2-9F1B

SC-97

2009-09-29

―

2SK3439

Unit: mm

Related parts for 2SK3439_09

2SK3439_09 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) DC-DC Converter Applications Relay Drive and Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 µA (max) ...

Page 2

Marking Part No. (or abbreviation code) K3439 Lot No. Note 4 Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise ...

Page 3

I – 100 Common source 25°C 8 Pulse test 2 0.2 0.4 0.6 0.8 Drain-source voltage V ( – V ...

Page 4

R – (ON) 6 Common source Pulse test −80 − Case temperature Tc (°C) Capacitance – 10000 ...

Page 5

Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 Single 0.01 0.00001 0.0001 Safe operating area 300 I D max (pulsed) * 100 μ max (continuous) 100 operation ...

Page 6

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

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