EL2004G ELANTEC [Elantec Semiconductor], EL2004G Datasheet - Page 3

• Manufacturer Part Number: EL2004G
• Description: 350 MHz FET Buffer
• Manufacturer: ELANTEC [Elantec Semiconductor]

V
Note 1 When operating at elevated temperatures the power dissipation of the EL2004 must be limited to the values shown in the
Note 2 Specification is at 25 C junction temperature due to requirements of high-speed automatic testing Actual values at operating
Note 3 Measured in still air seven minutes after application of power See graph of Input Current During Warm-up for further
Note 4 Bandwidth is calculated from the rise time The EL2004 has a single pole gain and phase response up to the
Note 5 Slew rate is measured between V
Note 6 Slew rate is measured between V
V
g
g
Parameter
V
A
R
R
V
I
PSRR
I
BW
t
C
Parameter
S
S
IN
S
s
OS
V
O
in
IN
OUT
5V DC Electrical Characteristics
15V AC Electrical Characteristics
e
e
g
g
typical performance curve ‘‘Maximum Power Dissipation vs Temperature’’ Junction to case thermal resistance is 31 C W
when dissipation is spread among the transistors in a normal AC steady-state condition In special conditions where heat is
concentrated in one output device junction temperature should be calculated using a thermal resistance of 70 C W
temperatures will exceed the value at T
may rise 40 C to 60 C above ambient and more under load conditions Accordingly V
I
information
frequency
5V T
15V R
IN
will change significantly during warm-up Refer to I
MIN k
L
Output Offset
Voltage
Voltage Gain
Input Impedance
Output
Impedance
Output Voltage
Swing
Input Current
Power Supply
Rejection Ratio
Supply Current
Bandwidth
Settling Time to 1%
Input Capacitance
e
Description
Description
1 k
T
A k
R
T
S
MAX
e
50
V
R
R
V
V
T
V
V
T
T
T
V
R
R
IN
J
J
A
J
S s
S s
IN
IN
IN
R
IN
S
L
L
T
e
e
e
L
(Note 4)
R
Test Conditions
e
J
e
e
e
e
e
e
e
e
V
L
e
e
Test Conditions
OUT
OUT
100 k
100 k
25 C V
25 C (Note 2)
T
25 C (Note 3)
g
1 k
1 k
IN
e
0V R
g
g
g
g
A
50
25 C unless otherwise specified
5V to
1V R
1V
1 V
4V
e
50
e
e a
e a
J
T
to Infinity
1V t
L
DC
IN
e
T
MAX
g
e
L
J
e
2 5V and
1V and
15V
25 C When supply voltages are
e
e
r
50
e
g
1 k
25 C
1V
3 ns
unless otherwise specified
b
b
1V for this test Pulse repetition rate is
g
Min
0 90
0 80
2 5V for this test
Min
10
200
140
2 0
IN
3
8
vs Temperature graph for expected values
Typ
g
10
Typ
0 95
0 88
17 5
350
200
10
60
4
2 9
6
3
11
EL2004
EL2004 EL2004C
EL2004
Max
Max
0 95
250
1 0
2 5
30
35
10
20
8
g
Level
Level
Test
Test
15V no-load operating junction temperatures
IV
V
I
I
I
I
I
I
I
I
I
I
V
V
350 MHz FET Buffer
I
I
OS
g
Min
Min
0 90
0 80
10
200
140
2 0
10
may change one to several mV and
Typ
g
Typ
10
0 95
0 88
17 5
350
200
k
10
60
6
3
EL2004C
4
2 9
EL2004C
11
50 MHz
Max
Max
0 95
500
1 0
30
35
10
20
20
5
Level
Level
Test
Test
III
III
IV
III
II
II
II
II
V
V
V
I
I
I
I
I
b
Units
Units
MHz
MHz
V V
V V
mV
mV
mA
pA
nA
nA
dB
pF
3 dB
ns
V