AN11102 PHILIPS [NXP Semiconductors], AN11102 Datasheet - Page 4

• Manufacturer Part Number: AN11102
• Description: BFU725F/N1 2.4 GHz LNA evaluation board
• Manufacturer: PHILIPS [NXP Semiconductors]

NXP Semiconductors
2. General description
3. Application Board
AN11102
Application note
The BFU725F/N1 is the first discrete HBT produced in NXPs SiGeC QuBIC4x BiCmos
process. SiGeC is a silicon germanium process with the addition of Carbon in the base
layer of the NPN transistor. The presence of carbon in the base layer suppresses the
boron diffusion during wafer processing that allows steeper and narrower SiGe HBT base
and a heavier doped base, this results in lower base resistance, hence lower noise and
higher cut off frequency (higher gain). In Table 1 a summary of the transistor
performance in terms of noise and gain is shown.
Table 1.
Measured at 2V Vce and 5mA Ic
Table 2.
The BFU725F/N1 2.4GHz EVB simplifies the evaluation of the BFU725F/N1 wideband
transistor, for this frequency range. The EVB enables testing of the device performance
and requires no additional support circuitry. The board is fully assembled with
BFU725F/N1, including input- and output matching, to optimize the performance. For
input matching a compromise has to be made for optimum noise/maximum
gain/RL/usable bandwidth on the application and customer requirements. To prevent
unwanted oscillations the stability factor (K) must be greater than 1. The stability factor
can be increased at the cost of gain. The board is mounted with signal input and output
SMA connectors for connection to RF test equipment.
Table 3.
Frequency
1.5 GHz
1.8 GHz
2.4 GHz
5.8 GHz
12 GHz
Pin
1
2
3
4
Parameter
Noise Figure
Power Gain
Input Return Loss
Output Return Loss
Stability factor
BFU725F/N1 figures
Pinning information of the BFU725F/N1
Design goals
Description
Emitter
Base
Emitter
Collector
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 July 2011
Symbol
NF
Gp
IRL
ORL
K
Noise Figure
0.42(dB)
0.43(dB)
0.47(dB)
0.7(dB)
1.1(dB)
BFU725F/N1 EVB
<1
>15
>5
>5
>1
Simplified outline
BFU725F/N1_2.4GHz LNA EVB
Associated gain
24(dB)
22(dB)
20(dB)
13.5(dB)
10(dB)
Unit
dB
dB
dB
dB
-
Graphic symbol
AN11102
© NXP B.V. 2011. All rights reserved.
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