SB820F_06 WTE [Won-Top Electronics], SB820F_06 Datasheet
SB820F_06
Manufacturer Part Number
SB820F_06
Description
8.0A SCHOTTKY BARRIER RECTIFIER
Manufacturer
WTE [Won-Top Electronics]
Datasheet
1.SB820F_06.pdf
(4 pages)
Features
!
!
!
!
!
!
Mechanical Data
!
!
!
!
!
!
!
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB820F – SB8100F
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage @T
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Schottky Barrier Chip
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
Case: ITO-220A, Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
2. Thermal resistance junction to case mounted on heatsink.
POWER SEMICONDUCTORS
Characteristic
WTE
@T
@I
A
A
F
= 100°C
C
= 25°C
= 8.0A
= 95°C
Symbol
T
V
V
V
R
j
R(RMS)
, T
I
V
I
FSM
RWM
V
RRM
I
RM
C
JC
FM
O
R
STG
j
SB820F – SB8100F
820F
SB
20
14
C
1 of 4
8.0A SCHOTTKY BARRIER RECTIFIER
830F
SB
30
21
G
F
K
I
0.55
PIN1
H
@T
840F
A
SB
40
28
=25°C unless otherwise specified
B
P
3
845F
SB
-65 to +150
45
32
J
L
A
E
150
700
8.0
0.5
5.0
50
850F
SB
50
35
0.75
PIN 1 +
PIN 3 -
860F
SB
Dim
60
42
B
C
D
G
H
K
A
E
F
L
P
J
I
© 2006 Won-Top Electronics
All Dimensions in mm
880F
SB
80
56
3.00 Ø
ITO-220A
14.60
13.00
9.70
2.55
3.56
0.30
6.30
4.20
2.50
0.36
2.90
4.83
Min
0.85
8100F
100
SB
70
3.50 Ø
15.40
10.30
13.80
Max
2.85
4.16
0.90
6.90
4.80
2.90
0.80
3.30
5.33
°C/W
Unit
Pb
mA
pF
°C
V
V
A
A
V
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SB820F_06 Summary of contents
Page 1
WTE POWER SEMICONDUCTORS Features ! Schottky Barrier Chip ! Guard Ring for Transient Protection ! Low Forward Voltage Drop ! Low Reverse Leakage Current ! High Surge Current Capability ! Plastic Material has UL Flammability Classification 94V ...
Page 2
Single Pulse Half-Wave 60 Hz Resistive or Inductive Load CASE TEMPERATURE (ºC) C Fig. 1 Forward Current Derating Curve 150 120 8.3ms Single Half Sine-Wave ...
Page 3
MARKING INFORMATION SB8xxF PACKAGING INFORMATION BULK Tube Size Quantity (mm) (PCS) 525 Note: 1. Anti-static tube, water clear color. RECOMMENDED SCREW MOUNTING ARRANGEMENT The full molded plastic ...
Page 4
Product No. SB820F SB830F SB840F SB845F SB850F SB860F SB880F SB8100F 1. 2. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this ...