FDMS2572_07 FAIRCHILD [Fairchild Semiconductor], FDMS2572_07 Datasheet
FDMS2572_07
Related parts for FDMS2572_07
FDMS2572_07 Summary of contents
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FDMS2572 N-Channel UltraFET Trench 150V, 27A, 47mΩ Features Max r = 47mΩ 10V, I DS(on) GS Max r = 53mΩ 6V, I DS(on) GS Low Miller Charge Optimized efficiency at high frequencies UIS Capability ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics (Note 2) V ...
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Typical Characteristics 10V GS 35 PULSE DURATION = 300 DUTY CYCLE = 2.0%MAX DRAIN TO SOURCE VOLTAGE ...
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Typical Characteristics 4. GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 125 J 1 0.01 0.1 t ...
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Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 1E-3 5E FDMS2572 Rev. 25°C unless otherwise noted RECTANGULAR ...
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FDMS2572 Rev.C2 6 www.fairchildsemi.com ...
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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ ...