VN0540N3 SUTEX [Supertex, Inc], VN0540N3 Datasheet

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VN0540N3

Manufacturer Part Number
VN0540N3
Description
N-Channel Enhancement-Mode Vertical DMOS FETs
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
† MIL visual screening available
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
Ordering Information
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
BV
BV
400V
ISS
DSS
DGS
and fast switching speeds
/
R
(max)
DS(ON)
35
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55 C to +150 C
250mA
BV
BV
300 C
(min)
I
D(ON)
20V
DSS
DGS
7-161
Package Options
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
VN0540N3
TO-92
Order Number / Package
VN0540ND
TO-92
S G D
Die
VN0540
7

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VN0540N3 Summary of contents

Page 1

... Order Number / Package I D(ON) (min) TO-92 250mA VN0540N3 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in MOS devices ...

Page 2

Thermal Characteristics Package I (continuous)* D TO-92 100mA * I (continuous) is limited by max rated Electrical Characteristics Symbol Parameter BV Drain-to-Source DSS Breakdown Voltage V Gate Threshold Voltage GS(th) V Change in V with Temperature ...

Page 3

Typical Performance Curves Output Characteristics 0 10V 0.4 0.3 0.2 0 (volts) DS Transconductance vs. Drain Current 0. 25V DS 0.2 0.15 0.1 0. 0.1 ...

Page 4

Typical Performance Curves BV Variation with Temperature DSS 1.1 1.0 0.9 - Transfer Characteristics 0 25V DS 0.4 0.3 0.2 0 (volts) GS Capacitance vs. Drain-to-Source ...

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