VN610 STMICROELECTRONICS [STMicroelectronics], VN610 Datasheet - Page 8

• Manufacturer Part Number: VN610
• Description: SINGLE CHANNEL HIGH SIDE SOLID STATE RELAY
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

APPLICATION SCHEMATIC
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
can be used with any type of load.
The following is an indication on how to dimension the
R
where -I
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
battery situations) is:
P
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
produce a shift (I
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Solution 2: A diode (D
A resistor (R
D
1
D
GND
GND
1) R
2) R
= (-V
GND
GND
resistor.
if the device will be driving an inductive load.
CC
GND
PROTECTION
+5V
)
2
C
/R
600mV / (I
is the DC reverse ground pin current and can
GND
GND
V
CC
=1k
S(on)max
) / (-I
GND
R
R
GND
S(on)max
GND
prot
R
should be inserted in parallel to
prot
SENSE
* R
) in the ground line.
)
(when V
NETWORK
GND
).
+5V
) in the input thresholds
S(on)max
CC
INPUT
CURRENT SENSE
<0: during reverse
GND
becomes the
GND
AGAINST
only). This
.
GND
will
V
GND
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j 600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
LOAD DUMP PROTECTION
D
voltage exceeds V
the device will be subject to transients on the V
are greater than the ones shown in the ISO T/R 7637/1
table.
If a ground protection network is used and negative
transients are present on the V
be pulled negative. ST suggests to insert a resistor (R
in line to prevent the C I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of C and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of C I/Os.
Calculation example:
For V
5k
Recommended R
C I/Os PROTECTION:
ld
-V
R
is necessary (Transil or MOV) if the load dump peak
GND
CCpeak
GND
CCpeak
R
prot
/I
latchup
= - 100V and I
V
CC
10k .
D
prot
GND
CC
R
value is 65k
OUTPUT
max DC rating. The same applies if
prot
latchup
(V
OH C
CC
line, the control pins will
-V
20mA; V
IH
-V
GND
OH C
VN610SP
) / I
D
CC
ld
IHmax
line that
4.5V
8/10
prot
1
1
)