IPS1225-40A IPS [IP SEMICONDUCTOR CO., LTD.], IPS1225-40A Datasheet

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IPS1225-40A

Manufacturer Part Number
IPS1225-40A
Description
silicon controlled rectifiers
Manufacturer
IPS [IP SEMICONDUCTOR CO., LTD.]
Datasheet
1.IPS1225-40A.pdf (4 pages)
RMS on–state current (Tc = 110℃, 180º conduction half sine wave)
Average on–state current (Tc = 110℃, 180º conduction half sine wave)
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
One cycle Non Repetitive surge current, 10ms sine pulse, rated VRRM
applied
One cycle Non Repetitive surge current, 10ms sine pulse, no voltage
applied
I²t Value for fusing, 10ms sine pulse, rated VRRM applied
I²t Value for fusing, 10ms sine pulse, no voltage applied
Critical rate of rise of turned – on current (I
Peak gate current
Average gate power dissipation
specifically designed for medium power switching and
phase control applications.
SIPOS and Glass passivation technology used has reliable
operation up to 125℃ junction temperature. Low Igt parts
available.
these products are designed to be used with international
recetifier input diodes, switches and output recetifiers
which are available in identical package outlines.
ABSOLUTE MAXIMUM RATINGS
MAIN FEATURES
High current density due to double mesa echnology;
Typical applications are in rectification (softstart) and
IPS61225 series of silicon controlled rectifiers are
V
DRM
Symbol
I
T(RMS)
V
TM
/ V
RRM
IP Semiconductor Co., Ltd.
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Parameter
Value
1200
≤ 1.6
25
t
Tj = 125℃
p = 20us, Tj = 125℃
Tj = 25℃
Tj = 25℃
G
= 2 X I
Tj = 25℃
Tj = 25℃
GT,
Unit
A
V
V
Tj = 125℃)
Symbol
I
P
T(RMS)
V
V
I
V
V
Tstg
dI/dt
I
T(AV)
I
G(AV)
TSM
DRM
RRM
DSM
RSM
GM
I²t
Tj
IPS1225-xxA
-40 to +150
-40 to +125
TO-220A
Value
1200
1200
1300
1300
250
260
310
320
100
25
16
4
1
Unit
A/us
A²s
℃
W
A
A
A
A
V
V
1

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IPS1225-40A Summary of contents

Page 1

... Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com Unit 25 A 1200 V ≤ 1 25℃ 25℃ 25℃ 25℃ 125℃ 20us 125℃ 125℃ IPS1225-xxA TO-220A Symbol Value Unit I 25 T(RMS T(AV) Tstg -40 to +150 Tj -40 to +125 V 1200 DRM V ...

Page 2

... Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com at - 40℃ at 125℃ at 25℃ at 125℃ = rated value) DRM gate open Tj = 125 ℃ 25℃ 25℃ DRM Tj = 125℃ RRM Parameter TO-220A IPS1225-xxA IPS1225-xxA 40 40 MAX 100 15 1.5 MAX 2.5 1.0 MAX 0.2 MAX 80 MAX 60 MIN ...

Page 3

... PACKAGE MECHANICAL DATA TO-220A 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPS1225-xxA Millimeters Min Typ Max A 4.4 4.6 B 0.61 0.88 C 0.46 0.70 C2 1.23 1.32 C3 2.4 2.72 D 8.6 9.7 E 9.8 10.4 F 6.2 6.6 G 4.8 5 29.8 L1 3.75 L2 1.14 1.7 L3 2.65 2.95 V 40º 3 ...

Page 4

... Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com IPS1225-xxA 4 ...

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