LM5101 NSC [National Semiconductor], LM5101 Datasheet

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LM5101

Manufacturer Part Number
LM5101
Description
High Voltage High Side and Low Side Gate Driver
Manufacturer
NSC [National Semiconductor]
Datasheet

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© 2004 National Semiconductor Corporation
LM5100/LM5101
High Voltage High Side and Low Side Gate Driver
General Description
The LM5100/LM5101 High Voltage Gate Drivers are de-
signed to drive both the high side and the low side
N-Channel MOSFETs in a synchronous buck or a half bridge
configuration. The floating high-side driver is capable of
operating with supply voltages up to 100V. The outputs are
independently controlled with CMOS input thresholds
(LM5100) or TTL input thresholds (LM5101). An integrated
high voltage diode is provided to charge the high side gate
drive bootstrap capacitor. A robust level shifter operates at
high speed while consuming low power and providing clean
level transitions from the control logic to the high side gate
driver. Under-voltage lockout is provided on both the low
side and the high side power rails. This device is available in
the standard SOIC-8 pin and the LLP-10 pin packages.
Features
n Drives both a high side and low side N-Channel
n Independent high and low driver logic inputs (TTL for
Simplified Block Diagram
MOSFET
LM5101 or CMOS for LM5100)
DS200888
FIGURE 1.
n Bootstrap supply voltage range up to 118V DC
n Fast propagation times (25 ns typical)
n Drives 1000 pF load with 15 ns rise and fall times
n Excellent propagation delay matching (3 ns typical)
n Supply rail under-voltage lockouts
n Low power consumption
n Pin compatible with HIP2100/HIP2101
Typical Applications
n Current Fed push-pull converters
n Half and Full Bridge power converters
n Synchronous buck converters
n Two switch forward power converters
n Forward with Active Clamp converters
Package
n SOIC-8
n LLP-10 (4 mm x 4 mm)
20088803
January 2004
www.national.com

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LM5101 Summary of contents

Page 1

... The floating high-side driver is capable of operating with supply voltages up to 100V. The outputs are independently controlled with CMOS input thresholds (LM5100) or TTL input thresholds (LM5101). An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at ...

Page 2

... Low side gate driver output Note: For LLP-10 package recommended that the exposed pad on the bottom of the LM5100 / LM5101 be soldered to ground plane on the PC board, and the ground plane should extend out from beneath the IC to help dissipate the heat. Pins 5 and 6 have no connection. ...

Page 3

... 12V 0V, No Load Conditions (LM5100 (LM5101 500 kHz 500 kHz 100V 500 kHz I = 100 µA VDD-HB ...

Page 4

... Either Output Rise/Fall Time R F (3V to 9V) t Minimum Input Pulse Width that PW Changes the Output t Bootstrap Diode Turn-Off Time BS LM5101 t Lower Turn-Off Propagation Delay (LI LPHL Falling to LO Falling) t Upper Turn-Off Propagation Delay (HI HPHL Falling to HO Falling) t Lower Turn-On Propagation Delay (LI LPLH ...

Page 5

... Switching Characteristics Specifications in standard typeface are for T perature range. Unless otherwise specified, V Symbol Parameter LM5101 t Minimum Input Pulse Width that PW Changes the Output t Bootstrap Diode Turn-Off Time BS Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is guaranteed ...

Page 6

... Typical performance Characteristics LM5100 I vs Frequency DD LM5100/LM5101 Operating Current vs Temperature Quiescent Current vs Supply Voltage www.national.com LM5101 I 20088809 IHB vs Frequency 20088811 LM5100/LM5101 Quiescent Current vs Temperature 20088818 6 vs Frequency DD 20088810 20088814 20088819 ...

Page 7

Typical performance Characteristics Undervoltage Rising Thresholds vs Temperature Bootstrap Diode Forward Voltage LO and HO Gate Drive — High Level Output Voltage vs Temperature (Continued) LM5100 Undervoltage Threshold Hysteresis vs 20088822 HO and LO Peak Output Current vs Output Voltage ...

Page 8

... Typical performance Characteristics LM5100 Propagation Delay vs Temperature www.national.com (Continued) LM5101 Propagation Delay vs Temperature 20088812 8 20088813 ...

Page 9

Timing Diagram Layout Considerations The optimum performance of high and low side gate drivers cannot be achieved without taking due considerations during circuit board layout. Following points are emphasized low ESR / ESL capacitor must be connected close ...

Page 10

... The following plot was generated based on calculations and lab measurements of the diode recovery time and current under several operating conditions. This can be useful for approximating the diode power dissipation. Diode Power Dissipation V FIGURE 4. LM5101 Driving MOSFETs Connected in Half-Bridge Configuration www.national.com Diode Power Dissipation V = 80V IN ...

Page 11

Physical Dimensions inches (millimeters) unless otherwise noted Controlling dimension is inch. Values are millimeters. Notes: Unless otherwise specified. 1. Standard lead finish to be 200 microinches/5.08 micrometers minimum lead/tin (solder) on copper. 2. Dimension does not include ...

Page 12

Physical Dimensions Notes: Unless otherwise specified. 1. For solder thickness and composition, see “Solder Information” in the packaging section of the National Semiconductor web page (www.national.com). 2. Maximum allowable metal burr on lead tips at the package edges is 76 ...

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