M54566DP MITSUBISHI [Mitsubishi Electric Semiconductor], M54566DP Datasheet
M54566DP
Related parts for M54566DP
M54566DP Summary of contents
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... DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES ●High breakdown voltage (BV > 50V) CEO ●High-current driving (Ic(max) = 400mA) ● ...
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... Ta = 25℃ Test conditions C = 15pF（note 1） L TIMING DIAGRAM V O INPUT R L OUTPUT OUTPUT 50Ω 30Ω 10V M54566DP Unit max 350 mA 200 － Limits ＊ min typ max － － 50 － 1.1 2.2 － ...
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... Grounded Emitter Transfer Characteristics 400 V = =4V CE 300 Ta=75℃ Ta=25℃ Ta=-20℃ 200 100 Supply voltage-Input voltage V (mA M54566DP Ta=75℃ Ta=25℃ Ta=-20℃ 0.5 1.0 1.5 2.0 (V) CE(sat) ① ② ③ ④ ⑤ ⑥ ⑦ 100 Duty cycle (%) Ta=75℃ Ta=25℃ Ta=-20℃ ...
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... Input Characteristics -1.0 V =8V CC -0.8 -0.6 Ta=-20℃ Ta=25℃ -0.4 Ta=75℃ -0 Supply voltage-Input voltage 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY Supply Current Characteristics Ta=-20℃ 3 Ta=25℃ 2 Ta=75℃ Supply Voltage M54566DP 8 10 (V) Jul-2011 ...
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... PRELIMINARY PACKAGE OUTLINE 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY 5 M54566DP Jul-2011 ...