TC55VBM316AFTN TOSHIBA [Toshiba Semiconductor], TC55VBM316AFTN Datasheet - Page 8

• Manufacturer Part Number: TC55VBM316AFTN
• Description: TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

A0~A18 (Word Mode)
A-1~A18 (Byte Mode)
I/O1~16 (Word Mode)
A0~A18 (Word Mode)
A-1~A18 (Byte Mode)
I/O1~16 (Word Mode)
I/O1~16 (Word Mode)
I/O1~8 (Byte Mode)
I/O1~8 (Byte Mode)
I/O1~8 (Byte Mode)
READ CYCLE
WRITE CYCLE 1 (R/W CONTROLLED)
UB , LB
UB , LB
Address
Address
D
D
CE2
R/W
CE2
CE
OUT
CE
OUT
D
OE
IN
1
1
(See Note 1)
Hi-Z
t
AS
(See Note 2)
(See Note 5)
t
COE
t
OEE
t
ACC
t
t
CO1
CO2
t
BE
t
OE
(See Note 4)
t
BA
t
t
t
WC
ODW
RC
t
t
t
CW
CW
BW
TC55VBM316AFTN/ASTN40,55
t
WP
VALID DATA IN
VALID DATA OUT
t
DS
Hi-Z
t
OEW
t
DH
t
WR
t
BD
t
ODO
t
OD
t
OH
2002-08-05 8/15
(See Note 3)
(See Note 5)
Hi-Z