CY14B256LA-ZS45XI CYPRESS [Cypress Semiconductor], CY14B256LA-ZS45XI Datasheet

CY14B256LA-ZS45XI

Manufacturer Part Number

CY14B256LA-ZS45XI

Description

256 Kbit (32K x 8) nvSRAM

Manufacturer

CYPRESS [Cypress Semiconductor]

Datasheet

1.CY14B256LA-ZS45XI.pdf (21 pages)

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Features

■

Cypress Semiconductor Corporation

Document Number: 001-54707 Rev. *B

25 ns and 45 ns Access Times

Internally Organized as 32K x 8 (CY14B256LA)

Hands off Automatic STORE on Power Down with only a Small

Capacitor

STORE to QuantumTrap Nonvolatile Elements Initiated by

Software, Device Pin, or AutoStore on Power Down

RECALL to SRAM Initiated by Software or Power Up

Infinite Read, Write, and Recall Cycles

1 Million STORE Cycles to QuantumTrap

20 year Data Retention

Single 3V +20% to -10% Operation

Industrial Temperature

44-Pin TSOP - II, 48-Pin SSOP, and 32-Pin SOIC Packages

Pb-free and RoHS Compliance

•

198 Champion Court

Functional Description

The Cypress CY14B256LA is a fast static RAM, with a nonvol-

atile element in each memory cell. The memory is organized as

32K bytes of 8 bits each. The embedded nonvolatile elements

incorporate QuantumTrap technology, producing the world’s

most reliable nonvolatile memory. The SRAM provides infinite

read and write cycles, while independent nonvolatile data

resides in the highly reliable QuantumTrap cell. Data transfers

from the SRAM to the nonvolatile elements (the STORE

operation) takes place automatically at power down. On power

up, data is restored to the SRAM (the RECALL operation) from

the nonvolatile memory. Both the STORE and RECALL opera-

tions are also available under software control.

•

256 Kbit (32K x 8) nvSRAM

San Jose

CA 95134-1709

Revised December 08, 2009

CY14B256LA

•

408-943-2600

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