NAND01G-N STMICROELECTRONICS [STMicroelectronics], NAND01G-N Datasheet - Page 18

• Manufacturer Part Number: NAND01G-N
• Description: 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Maximum rating
4
Table 3.
1. TBD stands for ‘To Be Determined’.
18/23
LPSDRAM Short Circuit
LPSDRAM Power
Output Current
V
Dissipation
DDD
Symbol
T
V
T
V
BIAS
, V
T
STG
DDF
Absolute Maximum Ratings
IO
A
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
DDQD
Ambient Operating Temperature
Temperature Under Bias
Storage Temperature
NAND Flash Input or Output Voltage
LPSDRAM Input or Output Voltage
NAND Flash Supply Voltage
LPSDRAM Supply Voltage
I
PD
OS
Parameter
(1)
Rev1.0
1.8V
1.8V
1.8V
1.8V
TBD
Min
-0.6
-1.0
-0.6
-1.0
-30
-55
Value
50
1
TBD
Max
125
2.7
2.7
85
2.6
2.6
NAND01G-N
Unit
mA
°C
°C
°C
W
V
V
V
V