CY62137CV CYPRESS [Cypress Semiconductor], CY62137CV Datasheet

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CY62137CV

Manufacturer Part Number
CY62137CV
Description
2M (128K x 16) Static RAM
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet

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Features
Functional Description
The CY62137CV25/30/33 and CY62137CV are high-perfor-
mance CMOS static RAMs organized as 128K words by 16
bits. These devices feature advanced circuit design to provide
ultra-low active current. This is ideal for providing More Battery
Cypress Semiconductor Corporation
Document #: 38-05201 Rev. *D
Note:
• Very high speed: 55 ns and 70 ns
• Voltage range:
• Pin-compatible with the CY62137V
• Ultra-low active power
• Low and ultra-low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered in a 48-ball FBGA
1.
Logic Block Diagram
— CY62137CV25: 2.2V–2.7V
— CY62137CV30: 2.7V–3.3V
— CY62137CV33: 3.0V–3.6V
— CY62137CV: 2.7V–3.6V
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 5.5 mA @ f = f
For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
speed)
[1]
A
A
A
A
A
A
A
A
A
A
A
10
10
6
5
4
3
2
1
0
9
8
7
max
3901 North First Street
(70-ns
Pow er -down
Circuit
COLUMN DECODER
DATA IN DRIVERS
RAM Array
2048 x 1024
128K x 16
Life™ (MoBL®) in portable applications such as cellular tele-
phones. The devices also has an automatic power-down fea-
ture that significantly reduces power consumption by 80%
when addresses are not toggling. The device can also be put
into standby mode reducing power consumption by more than
99% when deselected (CE HIGH or both BLE and BHE are
HIGH). The input/output pins (I/O
in a high-impedance state when: deselected (CE HIGH), out-
puts are disabled (OE HIGH), both Byte High Enable and Byte
Low Enable are disabled (BHE, BLE HIGH), or during a write
operation (CE LOW, and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.
2M (128K x 16) Static RAM
16
San Jose
). If Byte High Enable (BHE) is LOW, then data
CE
CY62137CV25/30/33 MoBL
8
BHE
BLE
through I/O
0
to I/O
CA 95134
CY62137CV MoBL
7
I/O
I/O
. If Byte High Enable (BHE) is
15
Revised September 20, 2002
0
0
8
) is written into the location
0
through A
– I/O
– I/O
through I/O
BHE
WE
CE
OE
BLE
7
15
0
16
through I/O
).
408-943-2600
15
8
to I/O
) are placed
15
. See
7
), is
®
®
0

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CY62137CV Summary of contents

Page 1

... CMOS for optimum speed/power • Packages offered in a 48-ball FBGA [1] Functional Description The CY62137CV25/30/33 and CY62137CV are high-perfor- mance CMOS static RAMs organized as 128K words by 16 bits. These devices feature advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery ...

Page 2

... CY62137CV Operating MHz Speed [5] [5] V (ns) Typ. Max. CC(max.) 2.7 55 1.5 70 1.5 3.3 55 1.5 70 1.5 3.6 55 1.5 70 1.5 3.6 70 1.5 3.6 70 1.5 CY62137CV25/30/33 MoBL CY62137CV MoBL Ambient Range Temperature T A Industrial –40°C to +85°C 2.2V to 2.7V Power Dissipation (mA Standby, I ...

Page 3

... WE, BHE, and BLE) CE > V – 0. > V – 0. < 0.2V 3.3V CC Test Conditions I = – 2.7V CC CY62137CV25/30/33 MoBL CY62137CV MoBL CY62137CV25-55 CY62137CV25-70 [5] [5] Typ. Max. Min. Typ. 2.0 2.0 0.4 1 1.8 CC 0.3V –0.3 0.6 –0.3 –1 +1 –1 –1 +1 – 5.5 1 ...

Page 4

... Still Air, soldered 4.5 inch, two-layer printed circuit board ALL INPUT PULSES V Typ CC 90% 10% GND R2 Rise TIme: 1 V/ns Equivalent to: THÉ VENIN EQUIVALENT R TH OUTPUT 3.0V 1105 1550 645 1.75 CY62137CV25/30/33 MoBL CY62137CV MoBL CY62137CV33-70 CY62137CV33-55 CY62137CV-70 [5] [5] Min. Typ. Max. Min. Typ. Max 0.3V –0.3 0.8 –0.3 –1 +1 – ...

Page 5

... > 100 s or stable CC(min.) CC(typ.) is less than less than t HZCE LZCE HZBE , BHE and/or BLE = V IL CY62137CV25/30/33 MoBL CY62137CV MoBL [5] Min. Typ. 1 < 0. CC(min Max ...

Page 6

... OHA [15, 16 ACE t DOE t LZOE LZOE t DBE 50% , BHE, BLE = CY62137CV25/30/33 MoBL CY62137CV MoBL Max Min Max DATA VALID HZCE t HZOE t HZBE DATA VALID 50% ® ...

Page 7

... During this period, the I/Os are in output state and input signals should not be applied. Document #: 38-05201 Rev. *D [13, 17, 18 SCE PWE DATA IN [13, 17, 18 SCE PWE DATA IN CY62137CV25/30/33 MoBL CY62137CV MoBL VALID VALID ® Page ...

Page 8

... Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS CE BHE/BLE DATA I/O NOTE 19 Document #: 38-05201 Rev. *D [18 SCE PWE t SD DATA t HZWE [18 SCE PWE t SD DATA CY62137CV25/30/33 MoBL CY62137CV MoBL VALID IN t LZWE VALID IN Page ® ...

Page 9

... Standby Current vs. Supply Voltage 12.0 10.0 MoBL 8.0 6.0 4.0 2.0 0 3.3 3.0 2.7 SUPPLY VOLTAGE (V) Access Time vs. Supply Voltage 60 60 MoBL 2.7 3.0 3.3 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) CY62137CV25/30/33 MoBL CY62137CV MoBL = 25° CC(typ.) A 14.0 12.0 10 max MoBL 55 ns) 8.0 6 max 70 ns) 4.0 2 MHz) 0.0 3.6 3.3 3.3 2.7 SUPPLY VOLTAGE (V) 12.0 12.0 MoBL MoBL 10 ...

Page 10

... Fine Pitch BGA ( 1.2 mm) 2.7–3.3 BV48A 48-ball Fine Pitch BGA ( mm) 3.0–3.6 BA48A 48-ball Fine Pitch BGA ( 1.2 mm) 3.0–3.6 BV48A 48-ball Fine Pitch BGA ( mm) CY62137CV25/30/33 MoBL CY62137CV MoBL Mode Power Standby ( Standby ( Active (I ) ...

Page 11

... Package Diagrams 48-ball (7. 7. 1.2 mm) FBGA BA48A Document #: 38-05201 Rev. *D CY62137CV25/30/33 MoBL CY62137CV MoBL 51-85096-*E Page ® ...

Page 12

... The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY62137CV25/30/33 MoBL 48-ball VFBGA ( mm) BV48A ® ® CY62137CV MoBL 51-85150-*A Page ...

Page 13

... GAV New Data Sheet (advance information) JUI Added BV package diagram Changed from Advance Information to Preliminary Changed from Preliminary to Final Added new part number: CY62137CV with wider voltage (2.7V – 3.6V). Added new SL power bin for new part number. For ns, improved t AA For T ...

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