EL5111AIYEZ INTERSIL [Intersil Corporation], EL5111AIYEZ Datasheet - Page 13

• Manufacturer Part Number: EL5111AIYEZ
• Description: 60MHz Rail-to-Rail Input-Output Op Amps
• Manufacturer: INTERSIL [Intersil Corporation]

Unused Amplifiers
It is recommended that any unused amplifiers in a dual and
a quad package be configured as a unity gain follower. The
inverting input should be directly connected to the output
and the non-inverting input tied to the ground plane.
FIGURE 33. PACKAGE POWER DISSIPATION vs AMBIENT
FIGURE 35. PACKAGE POWER DISSIPATION vs AMBIENT
0.350
0.300
0.250
0.200
0.150
0.100
0.050
0.000
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY (SINGLE LAYER) TEST BOARD
TEMPERATURE
TEMPERATURE
486mW
290mW
25
25
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
50
50
θ
13
JA
TSOT5
75
= +345°C/W
85
75
100
85
100
125
EL5111, EL5211, EL5411
125
150
Power Supply Bypassing and Printed Circuit
Board Layout
The EL5111, EL5211, and EL5411 can provide gain at high
frequency. As with any high-frequency device, good printed
circuit board layout is necessary for optimum performance.
Ground plane construction is highly recommended, lead
lengths should be as short as possible and the power supply
pins must be well bypassed to reduce the risk of oscillation.
For normal single supply operation, where the V
connected to ground, a 0.1µF ceramic capacitor should be
placed from V
capacitor should then be connected in parallel, placed in the
region of the amplifier. One 4.7µF capacitor may be used for
multiple devices. This same capacitor combination should be
placed at each supply pin to ground if split supplies are to be
used.
FIGURE 34.
FIGURE 36.
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
0
0
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY (4-LAYER) TEST BOARD
PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
483mW
S
870mW
+ to pin to V
25
AMBIENT TEMPERATURE (°C)
25
AMBIENT TEMPERATURE (°C)
50
S
50
θ
- pin. A 4.7µF tantalum
JA
TSOT5
75
= +207°C/W
85
75
100
85
100
125
S
- pin is
125
150
May 7, 2007
FN7119.7