TEA1098ATV PHILIPS [NXP Semiconductors], TEA1098ATV Datasheet - Page 25

• Manufacturer Part Number: TEA1098ATV
• Description: Speech and handsfree IC
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
2000 Mar 21
TX
G
THD
V
V
RX amplifiers
RX
G
G
V
G
G
G
G
G
G
G
G
HFTX(rms)
no(LN)
IR(rms)(max)
Speech and handsfree IC
v(HFTX-LN)
v(IR-RECO)(HF)
v(IR-RECO)(HS)
v(f)
v(T)
v(m)
v(MIC)(mute)
v(IR-RECO)
v(IR-RECO)
v(f)
v(T)
AMPLIFIER USING
SYMBOL
AMPLIFIERS USING
voltage gain from pin
HFTX to LN
gain variation with
frequency referenced to
1 kHz
gain variation with
temperature referenced
to 25 C
total harmonic
distortion at LN
maximum input voltage
at HFTX (RMS value)
noise output voltage at
pin LN; pin HFTX
shorted to GND
through 200
with 10 F
gain reduction when
muted
gain reduction in
microphone mute mode
voltage gain from IR to
RECO (handsfree
mode)
voltage gain from IR to
RECO (handset mode)
digital volume control
adjustment range in
handset mode
digital volume control
adjustment step in
handset mode
gain variation with
frequency referred to
1 kHz
gain variation with
temperature referenced
to 25 C
maximum input voltage
on IR (referenced to
LN) (RMS value)
HFTX (
IR (
PARAMETER
PINS
PINS
IR
HFTX
AND
in series
RECO)
AND
LN)
V
f = 300 to 3400 Hz
T
V
I
psophometrically weighted
(p53 curve)
MUTE = 0; see Table 2
MUTE = 1; BPC = 0;
see Table 2
V
V
EVCI = 0
V
EVCI = V
HFC = 0; per step
f = 300 to 3400 Hz
T
I
line
line
amb
amb
HFTX
LN
IR
IR
IR
= 70 mA; THD = 2%
= 4 mV (RMS); HFC = 1
= 4 mV (RMS); HFC = 0;
= 4 mV (RMS); HFC = 0;
= 70 mA; THD = 2%
= 1.4 V (RMS)
= 25 to +75 C
= 25 to +75 C
= 15 mV (RMS)
CONDITIONS
DD
25
33.5
60
60
28.4
16.2
13
MIN.
34.7
85
80
29.4
17.2
14.5
+4.85
50
0.25
0.35
77
0.25
0.3
TYP.
Preliminary specification
35.9
2
30.4
18.2
16
TEA1098A
MAX.
dB
dB
dB
%
mV
dBmp
dB
dB
dB
dB
dB
dB
dB
dB
mV
UNIT