ADG739 AD [Analog Devices], ADG739 Datasheet - Page 2

• Manufacturer Part Number: ADG739
• Description: CMOS, Low-Voltage, 3-Wire Serially-Controlled, Matrix Switches
• Manufacturer: AD [Analog Devices]

Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DIGITAL OUTPUT
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
ADG738/ADG739–SPECIFICATIONS
Temperature range is as follows: B Version: –40°C to +85°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On Resistance (R
On-Resistance Match Between
Channels (∆R
On-Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
C
Output Low Voltage
C
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
–3 dB Bandwidth
C
C
C
I
ON
OFF
DD
IN
OUT
S
D
D
ADG738
ADG739
ADG738
ADG739
ADG738
ADG739
, C
(OFF)
, Digital Input Capacitance
(OFF)
, Digital Output Capacitance
S
(ON)
ON
INL
)
ON
or I
)
D
INL
INH
S
D
(OFF)
INH
(OFF)
, I
FLAT(ON)
S
(ON)
2
D
)
25 C
2.5
4.5
0.75
± 0.01
± 0.1
± 0.01
± 0.1
± 0.01
± 0.1
0.005
3
4
20
10
9
± 3
–55
–75
–55
–75
65
100
13
85
42
96
48
10
B Version
–40 C
to +85 C
0 V to V
5
0.4
0.8
1.2
± 0.3
± 1
± 1
2.4
0.8
± 0.1
32
17
1
20
0.4
1
DD
(V
DD
= 5 V
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
dB typ
MHz typ
MHz typ
pF typ
pF typ
pF typ
pF typ
pF typ
µA typ
µA max
max
10%, GND = 0 V, unless otherwise noted.)
Test Conditions/Comments
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 3
V
V
I
R
V
R
V
R
V
V
Test Circuit 6
R
R
Test Circuit 8
R
R
Test Circuit 7
R
V
Digital Inputs = 0 V or 5.5 V
SINK
S
S
S
DD
D
D
D
IN
L
S1
L
S1
L
S1
S
L
L
L
L
L
DD
= 0 V to V
= 0 V to V
= 0 V to V
= 2.5 V, R
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 4.5 V/1 V, V
= 4.5 V/1 V, V
= V
= 3 V
= 3 V
= V
= V
= 5.5 V
= 5.5 V
= 6 mA
S
S8
INL
= 1 V/4.5 V, Test Circuit 4
= 3 V, Test Circuit 5
or V
L
L
L
L
L
DD
DD,
DD
S
L
L
L
= 5 pF, f = 10 MHz;
= 5 pF, f = 1 MHz;
= 5 pF, f = 10 MHz;
= 5 pF, f = 1 MHz;
= 5 pF, Test Circuit 8
= 0 Ω, C
INH
, I
, I
= 35 pF, Test Circuit 5;
= 35 pF, Test Circuit 5;
= 35 pF;
I
S
S
S
S
S
= 10 mA
= 1 V/4.5 V;
= 1 V/4.5 V;
= 10 mA;
= 10 mA
L
= 1 nF;