74LVX03 STMICROELECTRONICS [STMicroelectronics], 74LVX03 Datasheet

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74LVX03

Manufacturer Part Number
74LVX03
Description
LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE (OPEN DRAIN) WITH 5V TOLERANT INPUTS
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
DESCRIPTION
The 74LVX03 is a low voltage CMOS OPEN
DRAIN
sub-micron silicon gate and double-layer metal
wiring C
power, battery operated and low noise 3.3V
applications.
The internal circuit is composed of 3 stages
including buffer output, which provides high noise
immunity and stable output.
This device can, with an external pull-up resistor,
be used in wired AND configuration. This device
PIN CONNECTION AND IEC LOGIC SYMBOLS
July 2001
HIGH SPEED :
t
5V TOLERANT INPUTS
INPUT VOLTAGE LEVEL :
V
LOW POWER DISSIPATION:
I
LOW NOISE:
V
OPERATING VOLTAGE RANGE:
V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 03
IMPROVED LATCH-UP IMMUNITY
POWER DOWN PROTECTION ON INPUTS
PD
CC
IL
OLP
CC
=0.8V, V
= 4.8ns (TYP.) at V
= 2 A (MAX.) at T
(OPR) = 2V to 3.6V (1.2V Data Retention)
= 0.3V (TYP.) at V
2
MOS technology. It is ideal for low
HEX
IH
LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE
=2V at V
INVERTER
CC
A
CC
=25°C
CC
(OPEN DRAIN) WITH 5V TOLERANT INPUTS
=3V
= 3.3V
= 3.3V
fabricated
with
ORDER CODES
can also be used as a led driver and in any other
application requiring a current sink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage.
This device can be used to interface 5V to 3V
system. It combines high speed performance with
the true CMOS low power consumption.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PACKAGE
TSSOP
SOP
SOP
74LVX03M
TUBE
74LVX03
TSSOP
74LVX03MTR
74LVX03TTR
T & R
1/8

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74LVX03 Summary of contents

Page 1

... Data Retention) CC PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 03 IMPROVED LATCH-UP IMMUNITY POWER DOWN PROTECTION ON INPUTS DESCRIPTION The 74LVX03 is a low voltage CMOS OPEN DRAIN HEX INVERTER sub-micron silicon gate and double-layer metal 2 wiring C MOS technology ideal for low power, battery operated and low noise 3 ...

Page 2

... INPUT EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS Symbol V Supply Voltage Input Voltage Output Voltage Input Diode Current Output Diode Current Output Current Ground Current CC GND CC T Storage Temperature stg T Lead Temperature (10 sec) L Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied ...

Page 3

... CC (V) Min. 3.3 -0.5 3 3.3 Value = 25°C -40 to 85°C -55 to 125°C Typ. Max. Min. Max. Min. 1.5 1.5 2.0 2.0 2.4 2.4 0.5 0.5 0.8 0.8 0.8 0.8 0.0 0.1 0.1 0.0 0.1 0.1 0.36 0.44 0.1 1 0.25 2 Value = 25°C -40 to 85°C -55 to 125°C Typ. Max. Min. Max. Min. 0.3 0.5 -0.3 0.8 ILD 74LVX03 Unit Max. V 0.5 0.8 V 0.8 0.1 0 Unit Max threshold 3/8 ...

Page 4

... AC ELECTRICAL CHARACTERISTICS (Input t Symbol Parameter V t Propagation Delay PZL Time 3.3 3.3 t Propagation Delay PLZ Time 3.3 t Output To Output OSLH Skew Time (note1, t OSHL 3 Skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the same device switch- ...

Page 5

... TEST CIRCUIT C = 15/50pF or equivalent (includes jig and probe capacitance equivalent pulse generator (typically OUT WAVEFORM : PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 74LVX03 5/8 ...

Page 6

... DIM. MIN 0 0. 8. 3.8 G 4 6/8 SO-14 MECHANICAL DATA mm. TYP MAX. 1.75 0.2 1.65 0.46 0.25 0.5 45° (typ.) 8.75 6.2 1.27 7.62 4.0 5.3 1.27 0.68 8° (max.) inch MIN. TYP. MAX. 0.068 0.003 0.007 0.064 0.013 0.018 0.007 0.010 0.019 0.336 0.344 0.228 0.244 0.050 0.300 0.149 0.157 0.181 ...

Page 7

... PIN 1 IDENTIFICATION 1 mm. TYP MAX. 1.2 0.15 1 1.05 0.30 0.20 5 5.1 6.4 6.6 4.4 4.48 0.65 BSC 8° 0.60 0. 74LVX03 inch MIN. TYP. MAX. 0.047 0.002 0.004 0.006 0.031 0.039 0.041 0.007 0.012 0.004 0.0089 0.193 0.197 0.201 0.244 0.252 0.260 0.169 0.173 0.176 0.0256 BSC 0° 0.018 0.024 ...

Page 8

... Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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