LT1160_1 LINEAR [Linear Integrated Systems], LT1160_1 Datasheet

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LT1160_1

Manufacturer Part Number
LT1160_1
Description
Half-/Full-Bridge N-Channel Power MOSFET Drivers
Manufacturer
LINEAR [Linear Integrated Systems]
Datasheet
FEATURES
TYPICAL APPLICATIO
APPLICATIO S
0Hz TO 100kHz
Floating Top Driver Switches Up to 60V
Drives Gate of Top N-Channel MOSFET
above Load HV Supply
180ns Transition Times Driving 10,000pF
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
Top Drive Protection at High Duty Cycles
TTL/CMOS Input Levels
Undervoltage Lockout with Hysteresis
Operates at Supply Voltages from 10V to 15V
Separate Top and Bottom Drive Pins
PWM of High Current Inductive Loads
Half-Bridge and Full-Bridge Motor Control
Synchronous Step-Down Switching Regulators
3-Phase Brushless Motor Drive
High Current Transducer Drivers
Class D Power Amplifiers
12V
PWM
10µF
25V
U
10
1
4
2
3
SV
PV
UV OUT
IN TOP
IN BOTTOM
SGND
+
+
5
LT1160
1N4148
U
B GATE DR
T GATE DR
T GATE FB
T SOURCE
B GATE FB
PGND
BOOST
6
14
13
12
11
9
8
C
1µF
BOOST
DESCRIPTIO
The LT
N-channel power MOSFET drivers. The floating driver can
drive the topside N-channel power MOSFETs operating off
a high voltage (HV) rail of up to 60V.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
The LT1162 is a dual version of the LT1160 and is available
in a 24-pin PDIP or in a 24-pin SO Wide package.
All other trademarks are the property of their respective owners.
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
HV = 60V MAX
IRFZ44
IRFZ44
®
1160/LT1162 are cost effective half-/full-bridge
Power MOSFET Drivers
+
1000µF
100V
IN TOP IN BOTTOM T GATE DR B GATE DR
U
H
H
L
L
Half-/Full-Bridge
H
H
L
L
LT1160/LT1162
N-Channel
H
L
L
L
H
L
L
L
1160 TA01
11602fb
1

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LT1160_1 Summary of contents

Page 1

FEATURES Floating Top Driver Switches Up to 60V ■ ■ Drives Gate of Top N-Channel MOSFET above Load HV Supply ■ 180ns Transition Times Driving 10,000pF ■ Adaptive Nonoverlapping Gate Drives Prevent Shoot-Through ■ Top Drive Protection at High Duty ...

Page 2

LT1160/LT1162 ABSOLUTE MAXIMUM Supply Voltage (Note 2) ......................................... 20V Boost Voltage ......................................................... 75V Peak Output Currents (< 10µs) .............................. 1.5A Input Pin Voltages .......................... – 0. Top Source Voltage ..................................... – 60V Boost ...

Page 3

ELECTRICAL CHARACTERISTICS temperature range, otherwise specifications are at T 3000pF. Gate Feedback pins connected to Gate Drive pins, unless otherwise specified. SYMBOL PARAMETER I Undervoltage Output Leakage UVOUT V Undervoltage Output Saturation UVOUT V Top Gate ON Voltage OH Bottom ...

Page 4

LT1160/LT1162 W U TYPICAL PERFORMANCE CHARACTERISTICS DC Supply Current vs Supply Voltage 14 13 BOTH INPUTS 12 HIGH OR LOW HIGH INTOP V = LOW INBOTTOM LOW INTOP HIGH INBOTTOM ...

Page 5

W U TYPICAL PERFORMANCE CHARACTERISTICS Bottom Gate Rise Time vs Temperature 230 + V = 12V 210 190 C = 10000pF LOAD 170 150 130 110 C = 3000pF 90 LOAD 1000pF LOAD 50 –50 –25 0 ...

Page 6

LT1160/LT1162 PIN FUNCTIONS LT1160 + SV (Pin 1): Main Signal Supply. Must be closely decoupled to the signal ground Pin 5. IN TOP (Pin 2): Top Driver Input. Pin 2 is disabled when Pin 3 is high. ...

Page 7

U U FUNCTIONAL DIAGRA + BIAS TOP BOTTOM 5V UV OUT SGND LT1160 PGND 1/2 LT1162 GND TEST CIRCUIT (LT1160 or 1/2 LT1162) + V/I 1µF 3k 50Ω W (LT1160 or 1/2 LT1162) TOP ...

Page 8

LT1160/LT1162 DIAGRA 2V IN TOP 0. BOTTOM 0.8V 12V TOP GATE DRIVER 12V 10V BOTTOM GATE 2V DRIVER OPERATIO (Refer to ...

Page 9

U U APPLICATIONS INFORMATION Power MOSFET Selection Since the LT1160 (or 1/2 LT1162) inherently protects the top and bottom MOSFETs from simultaneous conduction, there are no size or matching constraints. Therefore selec- tion can be made based on the operating ...

Page 10

LT1160/LT1162 U U APPLICATIONS INFORMATION The actual increase in supply current is slightly higher due to LT1160 switching losses and the fact that the gates are being charged to more than 10V. Supply Current vs Input Frequency is given in ...

Page 11

U U APPLICATIONS INFORMATION 12V REF PWM OUT A OUT A Figure 2. Adding Synchronous Switching to a Step-Down Switching Regulator Motor Drive Applications In applications where rotation is always in the same direction, a single LT1160 controlling a half-bridge ...

Page 12

LT1160/LT1162 U TYPICAL APPLICATIONS 0.1µF 4.7k C1 0.1µ 4.7k 360Ω 0.33µ 0.022µF 1µ LT3526 1N4148 0.1µF 510Ω SHUTDOWN 9 10 27k f = ...

Page 13

U TYPICAL APPLICATIONS 100µF 10k LT1015 3 4 100k 1k 1k 1µF 0.1µF 1k 0.0033µF 47µF 47µF 10k 10k 95k 200k Kool Mµ registered trademark of Magnetics, Inc. 150k 0.0033µF 12V 10µF ...

Page 14

LT1160/LT1162 PACKAGE DESCRIPTION .300 – .325 (7.620 – 8.255) .008 – .015 (0.203 – 0.381) +.035 .325 –.015 ( +0.889 8.255 –0.381 NOTE: 1. DIMENSIONS ARE *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL ...

Page 15

PACKAGE DESCRIPTION .050 BSC N .245 MIN .030 ±.005 TYP RECOMMENDED SOLDER PAD LAYOUT .010 – .020 × 45° (0.254 – 0.508) .008 – .010 (0.203 – 0.254) .016 – .050 (0.406 – 1.270) NOTE: INCHES 1. ...

Page 16

LT1160/LT1162 PACKAGE DESCRIPTION .030 ±.005 .050 BSC TYP N .420 MIN RECOMMENDED SOLDER PAD LAYOUT .291 – .299 (7.391 – 7.595) NOTE 4 .010 – .029 × 45° (0.254 – 0.737) .005 (0.127) RAD MIN .009 – ...

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