H1144 HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD], H1144 Datasheet
H1144
Manufacturer Part Number
H1144
Description
PNP SILICON TRANSISTOR
Manufacturer
HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
Datasheet
1.H1144.pdf
(1 pages)
█ APPLICATIONS
█ h
█ ABSOLUTE MAXIMUM RATINGS（T
█ ELECTRICAL CHARACTERISTICS（T
H
H
V
V
BV
BV
BV
Symbol
T
T
P
P
V
V
V
I
I
I
FE（1）
FE（2）
Medium frequency power amplifier，Medium Seed switching.
t
Cob
CE(sat)
BE(sat)
C
t
CBO
EBO
STG
C
C
stg
j
CBO
CEO
EBO
ON
——Collector Current……………………………………-1.5A
t
——Junction Temperature……………………………… 150℃
f
——Collector Dissipation（T
——Collector Dissipation （T
CBO
CEO
EBO
F
t
FE
——Storage Temperature………………………… -55~150℃
——Emitter-Base Voltage……………………………… -6V
——Collector-Base Voltage………………………… -120V
——Collector-Emitter Voltage……………………… -100V
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn-On Time
Storage Time
Fall Time
Current Gain-Bandwidth Product
Output Capacitance
Shantou Huashan Electronic Devices Co.,Ltd.
100—200
Characteristics
R
A
c
=25℃） …………………… 1.5W
=25℃）…………………… 10W
140—280
-120
-100
S
Min
100
-6
30
a
=25℃）
a
=25℃）
0.18
0.85
750
100
Typ
80
40
18
-100
-100
Max
400
0.5
1.2
PN P S I L I C O N T R A N S I S T O R
200—400
Unit
MHz
nA
nA
nS
nS
nS
pF
V
V
V
V
V
TO-126ML
T
2―Collector，C
1―Emitter，E
3―Base，B
H1144
I
I
I
V
V
V
V
I
I
V
V
C
C
E
C
C
=-10μA，I
CB
EB
CE
CE
CE
CB
=-10μA, I
=-1mA, I
=-500mA, I
=-500mA, I
See specified test circuit
=-100V, I
=-4V, I
=-5V, I
=-5V, I
=-10V, I
=-10V, I
Test Conditions
C
C
C
B
=0
=-100mA
=-1A
C
=0
E
E
=-50mA,
=0,f=1MHz
E
B
B
=0
C
=0
=-50mA
=-50mA
=0
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