AM1320N ANALOGPOWER [Analog Power], AM1320N Datasheet

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AM1320N

Manufacturer Part Number
AM1320N
Description
N-Channel 20V (D-S) MOSFET
Manufacturer
ANALOGPOWER [Analog Power]
Datasheet
1.AM1320N.pdf (4 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
AM1320N-T1-PF
Manufacturer:
ANALOGPOWER
Quantity:
20 000
Analog Power
•
•
•
•
PRELIMINARY
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
Notes
a.
b.
ABSOLUTE MAX IMUM RATING S (T
Drain-Source Voltage
G ate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Tem perature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
DS(on)
Low r
extends battery life
Low thermal impedance copper leadframe
SC70-3 saves board space
Fast switching speed
High performance trench technology
and to ensure minimal power loss and heat
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
DS(on)
provides higher efficiency and
a
b
Parameter
a
N-Channel 20V (D-S) MOSFET
Param eter
a
A
Steady-State
= 25
t <= 5 sec
a
1
o
C UNLESS OTHERW ISE NOTED)
PRO DUCT SUM M A RY
V
DS
20
T
T
T
T
(V )
A
A
A
A
=25
=70
=25
=70
Symbol Maximum Units
R
o
o
o
o
THJA
0.058 @ V
C
C
C
C
0.082 @ V
V
V
I
I
I
P
Sym bol Maxim um Units
D
DM
S
T
D
D S
G S
r
J
, T
DS(on)
Publication Order Number:
stg
G S
G S
100
166
-55 to 150
(Ω)
= 4.5 V
G
= 2.5V
S
0.34
0.22
±20
2.0
1.7
1.6
±8
20
DS-AM1320_A
AM1320N
o
C/W
o
W
V
A
A
I
C
D
2.0
1.7
D
(A )

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AM1320N Summary of contents

Page 1

... Pulse width limited by maximum junction temperature PRELIMINARY N-Channel 20V (D-S) MOSFET PRO DUCT SUM UNLESS OTHERW ISE NOTED) A Param eter a t <= 5 sec a Steady-State 1 AM1320N ( (Ω) DS(on) 0.058 @ 0.082 @ Sym bol Maxim um Units ± ...

Page 2

... 4 iss oss f = 1MHz C rss t d(on 4 GEN d(off AM1320N Limits Min Typ = 250 uA 0 ± 2 0.75 GS 7.5 = 2.0 A 0.6 D 1.0 ...

Page 3

... Figure 2. Body Diode Forward Voltage Variation with Source Current and Temperature 700 600 500 400 300 200 10V 100 Figure 6. On-Resistance Variation with Temperature 3 AM1320N o VDS = - 125 C 1.5 2.5 3.5 VGS, GATE TO SOURCE VOLTAGE ( 1MHz ...

Page 4

... Figure 8. On-Resistance with Gate to Source Voltage 50 VDS = VGS ID = 250mA 0.001 75 100 125 150 175 o C) Figure 10. Single Pulse Maximum Power Dissipation 0.01 0.1 1 t1, TIM Figure 11. Transient Thermal Response Curve 4 AM1320N 0 5.3A D 0.08 0. GATE TO SOURCE VOLTAGE (V) GS SINGLE PULSE 125 θ ...

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